Optimizing Al Composition in Barriers for InGaN Amber Micro-LEDs with High Wall-Plug Efficiency

Yimeng Sang; Zhe Zhuang; Kun Xing; Zhuoying Jiang; Chenxue Li; Feifan Xu; Dongqi Zhang; Junchi Yu; Jianguo Zhao; Ting Zhi; Tao Tao; Cheng Li; Kai Huang; Kazuhiro Ohkawa; Rong Zhang; Bin Liu

doi:10.1109/LED.2023.3335928

Optimizing Al Composition in Barriers for InGaN Amber Micro-LEDs with High Wall-Plug Efficiency

Yimeng Sang, Zhe Zhuang^*, Kun Xing^*, Zhuoying Jiang, Chenxue Li, Feifan Xu, Dongqi Zhang, Junchi Yu, Jianguo Zhao, Ting Zhi, Tao Tao, Cheng Li, Kai Huang, Kazuhiro Ohkawa, Rong Zhang, Bin Liu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

This study demonstrated InGaN-based amber micro-light-emitting diodes ( $\mu $ LEDs) with varying Al contents of 2%, 5%, and 16% in barriers. The $\mu $ LEDs with Al $_{\mathbf {{0}.{05}}}$ GaN in barriers exhibited the highest on-wafer wall-plug efficiency due to the good material quality and optimal energy band engineering for carrier injection. We fabricated $\mu $ LEDs with diameters ranging from 60 to $10~\mu \text{m}$ using the optimal epi-structure. The forward voltage was 2.15 V at 1 A/cm $^{\mathbf {{2}}}$ , a significantly lower value compared to others. The external quantum efficiency and wall-plug efficiency of the packaged $\mu $ LEDs with a diameter of $10 ~\mu \text{m}$ are 4.8% and 4% at 1 A/cm $^{\mathbf {{2}}}$ , respectively. The slight decrease in efficiency of 10- $\mu \text{m} \mu $ LEDs can be attributed to the sidewall effect, which was confirmed by photoluminescent and lifetime mapping.

Original language	English (US)
Pages (from-to)	76-79
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	45
Issue number	1
DOIs	https://doi.org/10.1109/LED.2023.3335928
State	Published - Jan 1 2024

Keywords

Al content in barriers
amber micro-light-emitting diode
InGaN
wall-plug efficiency

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2023.3335928

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title = "Optimizing Al Composition in Barriers for InGaN Amber Micro-LEDs with High Wall-Plug Efficiency",

abstract = "This study demonstrated InGaN-based amber micro-light-emitting diodes ( $\mu $ LEDs) with varying Al contents of 2%, 5%, and 16% in barriers. The $\mu $ LEDs with Al $_{\mathbf {{0}.{05}}}$ GaN in barriers exhibited the highest on-wafer wall-plug efficiency due to the good material quality and optimal energy band engineering for carrier injection. We fabricated $\mu $ LEDs with diameters ranging from 60 to $10~\mu \text{m}$ using the optimal epi-structure. The forward voltage was 2.15 V at 1 A/cm $^{\mathbf {{2}}}$ , a significantly lower value compared to others. The external quantum efficiency and wall-plug efficiency of the packaged $\mu $ LEDs with a diameter of $10 ~\mu \text{m}$ are 4.8% and 4% at 1 A/cm $^{\mathbf {{2}}}$ , respectively. The slight decrease in efficiency of 10- $\mu \text{m} \mu $ LEDs can be attributed to the sidewall effect, which was confirmed by photoluminescent and lifetime mapping.",

keywords = "Al content in barriers, amber micro-light-emitting diode, InGaN, wall-plug efficiency",

author = "Yimeng Sang and Zhe Zhuang and Kun Xing and Zhuoying Jiang and Chenxue Li and Feifan Xu and Dongqi Zhang and Junchi Yu and Jianguo Zhao and Ting Zhi and Tao Tao and Cheng Li and Kai Huang and Kazuhiro Ohkawa and Rong Zhang and Bin Liu",

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year = "2024",

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doi = "10.1109/LED.2023.3335928",

language = "English (US)",

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T1 - Optimizing Al Composition in Barriers for InGaN Amber Micro-LEDs with High Wall-Plug Efficiency

AU - Sang, Yimeng

AU - Zhuang, Zhe

AU - Xing, Kun

AU - Jiang, Zhuoying

AU - Li, Chenxue

AU - Xu, Feifan

AU - Zhang, Dongqi

AU - Yu, Junchi

AU - Zhao, Jianguo

AU - Zhi, Ting

AU - Tao, Tao

AU - Li, Cheng

AU - Huang, Kai

AU - Ohkawa, Kazuhiro

AU - Zhang, Rong

AU - Liu, Bin

PY - 2024/1/1

Y1 - 2024/1/1

N2 - This study demonstrated InGaN-based amber micro-light-emitting diodes ( $\mu $ LEDs) with varying Al contents of 2%, 5%, and 16% in barriers. The $\mu $ LEDs with Al $_{\mathbf {{0}.{05}}}$ GaN in barriers exhibited the highest on-wafer wall-plug efficiency due to the good material quality and optimal energy band engineering for carrier injection. We fabricated $\mu $ LEDs with diameters ranging from 60 to $10~\mu \text{m}$ using the optimal epi-structure. The forward voltage was 2.15 V at 1 A/cm $^{\mathbf {{2}}}$ , a significantly lower value compared to others. The external quantum efficiency and wall-plug efficiency of the packaged $\mu $ LEDs with a diameter of $10 ~\mu \text{m}$ are 4.8% and 4% at 1 A/cm $^{\mathbf {{2}}}$ , respectively. The slight decrease in efficiency of 10- $\mu \text{m} \mu $ LEDs can be attributed to the sidewall effect, which was confirmed by photoluminescent and lifetime mapping.

AB - This study demonstrated InGaN-based amber micro-light-emitting diodes ( $\mu $ LEDs) with varying Al contents of 2%, 5%, and 16% in barriers. The $\mu $ LEDs with Al $_{\mathbf {{0}.{05}}}$ GaN in barriers exhibited the highest on-wafer wall-plug efficiency due to the good material quality and optimal energy band engineering for carrier injection. We fabricated $\mu $ LEDs with diameters ranging from 60 to $10~\mu \text{m}$ using the optimal epi-structure. The forward voltage was 2.15 V at 1 A/cm $^{\mathbf {{2}}}$ , a significantly lower value compared to others. The external quantum efficiency and wall-plug efficiency of the packaged $\mu $ LEDs with a diameter of $10 ~\mu \text{m}$ are 4.8% and 4% at 1 A/cm $^{\mathbf {{2}}}$ , respectively. The slight decrease in efficiency of 10- $\mu \text{m} \mu $ LEDs can be attributed to the sidewall effect, which was confirmed by photoluminescent and lifetime mapping.

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KW - amber micro-light-emitting diode

KW - InGaN

KW - wall-plug efficiency

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Optimizing Al Composition in Barriers for InGaN Amber Micro-LEDs with High Wall-Plug Efficiency

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