TY - PAT
T1 - Optoelectronic devices, low temperature preparation methods, and improved electron transport layers
AU - Eita, Mohamed Samir
AU - El, Labban Abdulrahman
AU - Usman, Anwar
AU - Beaujuge, Pierre
AU - Mohammed, Omar F.
N1 - KAUST Repository Item: Exported on 2019-02-13
PY - 2016/8/4
Y1 - 2016/8/4
N2 - An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc oxide. The plurality of layers can be prepared by layer-by-layer processing in which alternating layers are built up step-by-step due to electrostatic attraction. The efficiency of the device can be increased by this processing method compared to a comparable method like sputtering. The number of layers can be controlled to improve device efficiency. Aqueous solutions can be used which is environmentally friendly. Annealing can be avoided. A quantum dot layer can be used next to the metal oxide layer to form a quantum dot heterojunction solar device.
AB - An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc oxide. The plurality of layers can be prepared by layer-by-layer processing in which alternating layers are built up step-by-step due to electrostatic attraction. The efficiency of the device can be increased by this processing method compared to a comparable method like sputtering. The number of layers can be controlled to improve device efficiency. Aqueous solutions can be used which is environmentally friendly. Annealing can be avoided. A quantum dot layer can be used next to the metal oxide layer to form a quantum dot heterojunction solar device.
UR - http://hdl.handle.net/10754/622633
UR - http://www.google.com/patents/WO2016120721A1
UR - http://worldwide.espacenet.com/publicationDetails/biblio?CC=WO&NR=2016120721A1&KC=A1&FT=D
M3 - Patent
M1 - WO 2016120721 A1
ER -