Organometallic halide perovskite single crystals having low defect density and methods of preparation thereof

Osman M. Bakr; Dong Shi

Organometallic halide perovskite single crystals having low defect density and methods of preparation thereof

Osman M. Bakr (Inventor), Dong Shi (Inventor)

Research output: Patent

Abstract

Embodiments of the present disclosure provide for single crystal organometallic halide perovskites, methods of making, methods of use, devices incorporating single crystal organometallic halide perovskites, and the like.

Original language	English (US)
Patent number	US2017236651
IPC	H01L 51/ 00 A I
Priority date	08/12/15
State	Published - Aug 17 2017

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title = "Organometallic halide perovskite single crystals having low defect density and methods of preparation thereof",

abstract = "Embodiments of the present disclosure provide for single crystal organometallic halide perovskites, methods of making, methods of use, devices incorporating single crystal organometallic halide perovskites, and the like.",

author = "Bakr, {Osman M.} and Dong Shi",

note = "KAUST Repository Item: Exported on 2019-02-13; US2017236651; H01L 51/ 00 A I",

year = "2017",

month = aug,

day = "17",

language = "English (US)",

type = "Patent",

}

TY - PAT

T1 - Organometallic halide perovskite single crystals having low defect density and methods of preparation thereof

AU - Bakr, Osman M.

AU - Shi, Dong

N1 - KAUST Repository Item: Exported on 2019-02-13

PY - 2017/8/17

Y1 - 2017/8/17

N2 - Embodiments of the present disclosure provide for single crystal organometallic halide perovskites, methods of making, methods of use, devices incorporating single crystal organometallic halide perovskites, and the like.

AB - Embodiments of the present disclosure provide for single crystal organometallic halide perovskites, methods of making, methods of use, devices incorporating single crystal organometallic halide perovskites, and the like.

UR - http://hdl.handle.net/10754/629627

UR - https://patents.google.com/patent/US20170236651A1/en

M3 - Patent

M1 - US2017236651

ER -

Organometallic halide perovskite single crystals having low defect density and methods of preparation thereof

Abstract

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