Orientation Heredity in The Transformation of Two-Dimensional Epitaxial Films

Xiangming Xu, Jasmin Smajic, Kuang-hui Li, Jung-Wook Min, Yongjiu Lei, Bambar Davaasuren, Xin He, Xixiang Zhang, Boon S. Ooi, Pedro M. F. J. Da Costa, Husam N. Alshareef

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


Controlling the lattice orientation is significant for both two-dimensional (2D) vdW layered and non-layered film growth process. Here we report a unique and universal phenomena termed lattice orientation heredity (LOH). The LOH enables product films (including 2D layered materials) to inherit the lattice orientation from reactant films in a chemical conversion process, excluding the requirement on the substrate lattice order. We demonstrate the process universality by investigating the lattice transformations in the carbonization, nitridation, and sulfurization of epitaxial MoO2, ZnO, and In2O3 thin films. Their resultant compounds all inherit mono-oriented feature from their precursor oxides, including 2D vdW layered semiconductors (e.g., MoS2), metallic films (e.g., MXene-like Mo2C and MoN), wide bandgap semiconductors (e.g., hexagonal ZnS), and ferroelectric semiconductors (e.g., In2S3). Using LOH-grown MoN as a seeding layer, we achieved mono-oriented GaN on an amorphous quartz substrate. The LOH process is a universal strategy capable of growing epitaxial thin films (including 2D vdW layered materials) not only on single-crystalline but also the non-crystalline.
Original languageEnglish (US)
Pages (from-to)2105190
JournalAdvanced Materials
StatePublished - Nov 11 2021

ASJC Scopus subject areas

  • Mechanics of Materials
  • General Materials Science
  • Mechanical Engineering


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