Origin of current broadening in resonant tunneling via localised states

C. Zhang, D. J. Fisher, S. M. Stewart

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


It is found that in electron resonant tunneling via localised states, the current exhibits a very strong temperature dependence and power nonconservation. This subtle behaviour is due to the impurity states induced tunneling which is subsequently renormalised by an overlap integral of many-electron states in the emitter. By using a temperature-dependent dynamical approach, an analysis of this interesting tunneling process is performed. It is found that the temperature dependence of the current has a very different origin from the thermal activation. It is also found that plasmon excitation in the emitter further renormalises the tunneling current by a factor of two to three orders of magnitude.
Original languageEnglish (US)
Pages (from-to)231-234
Number of pages4
JournalSurface Science
StatePublished - Jul 20 1996

ASJC Scopus subject areas

  • Materials Chemistry
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Condensed Matter Physics


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