TY - GEN
T1 - Out-of-plane strain effect on silicon-based flexible FinFETs
AU - Ghoneim, Mohamed T.
AU - Alfaraj, Nasir
AU - Sevilla, Galo T.
AU - Fahad, Hossain M.
AU - Hussain, Muhammad Mustafa
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2015/8/12
Y1 - 2015/8/12
N2 - Summary form only given. We report out-of-plane strain effect on silicon based flexible FinFET, with sub 20 nm wide fins and hafnium silicate based high-κ gate dielectric. Since ultra-thin inorganic solid state substrates become flexible with reduced thickness, flexing induced strain does not enhance performance. However, detrimental effects arise as the devices are subject to various out-of-plane stresses (compressive and tensile) along the channel length.
AB - Summary form only given. We report out-of-plane strain effect on silicon based flexible FinFET, with sub 20 nm wide fins and hafnium silicate based high-κ gate dielectric. Since ultra-thin inorganic solid state substrates become flexible with reduced thickness, flexing induced strain does not enhance performance. However, detrimental effects arise as the devices are subject to various out-of-plane stresses (compressive and tensile) along the channel length.
UR - http://hdl.handle.net/10754/581769
UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7175572
UR - http://www.scopus.com/inward/record.url?scp=84957614298&partnerID=8YFLogxK
U2 - 10.1109/DRC.2015.7175572
DO - 10.1109/DRC.2015.7175572
M3 - Conference contribution
SN - 9781467381345
SP - 95
EP - 96
BT - 2015 73rd Annual Device Research Conference (DRC)
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -