Abstract
A simple top-down fabrication technique that involves scanning probe lithography on Si is presented. The writing procedure consists of a chemically selective patterning in mesitylene. Operating in an organic media is possible to perform local oxidation or solvent decomposition during the same pass by tuning the applied bias. The layer deposited with a positively biased tip with sub-100-nm lateral resolution consists of nanocrystalline graphite, as verified by Raman spectroscopy. The oxide pattern obtained in opposite polarization is later used as a mask for dry etching, showing a remarkable selectivity in SF6plasma, to produce Si nanofeatured molds.
Original language | English (US) |
---|---|
Article number | 75 |
Pages (from-to) | 1-9 |
Number of pages | 9 |
Journal | Nanoscale Research Letters |
Volume | 8 |
Issue number | 1 |
DOIs | |
State | Published - 2013 |
Keywords
- Dry etching mask
- Nanocrystalline graphite
- Scanning probe lithography
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics