Abstract
Effects of oxygen doping on the electrical properties of α-NiPc based devices were investigated using in situ and ex situ I-V measurements. Photovoltaic performance of the Schottky devices was assessed under white light illumination through the semitransparent top Pb electrode supplied by a 500 W halogen lamp. Results demonstrated that simple exposure of α-NiPc films to dry air resulted in efficient p-type doping.
Original language | English (US) |
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Pages (from-to) | 1628-1630 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 82 |
Issue number | 10 |
DOIs | |
State | Published - Mar 10 2003 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)