P-type Cu2O/SnO bilayer thin film transistors processed at low temperatures

Hala A. Al-Jawhari, Jesus Alfonso Caraveo-Frescas, Mohamed N. Hedhili, Husam N. Alshareef

Research output: Contribution to journalArticlepeer-review

39 Scopus citations


P-type Cu2O/SnO bilayer thin film transistors (TFTs) with tunable performance were fabricated using room temperature sputtered copper and tin oxides. Using Cu2O film as capping layer on top of a SnO film to control its stoichiometry, we have optimized the performance of the resulting bilayer transistor. A transistor with 10 nm/15 nm Cu2O to SnO thickness ratio (25 nm total thickness) showed the best performance using a maximum process temperature of 170 C. The bilayer transistor exhibited p-type behavior with field-effect mobility, on-to-off current ratio, and threshold voltage of 0.66 cm2 V-1 s-1, 1.5×10 2, and -5.2 V, respectively. The advantages of the bilayer structure relative to single layer transistor are discussed. © 2013 American Chemical Society.
Original languageEnglish (US)
Pages (from-to)9615-9619
Number of pages5
JournalACS Applied Materials & Interfaces
Issue number19
StatePublished - Sep 25 2013

ASJC Scopus subject areas

  • General Materials Science


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