TY - JOUR
T1 - P-Type SnO Thin Film Phototransistor with Perovskite-Mediated Photogating
AU - Guan, Xinwei
AU - Wang, Zhenwei
AU - Hota, Mrinal Kanti
AU - Alshareef, Husam N.
AU - Wu, Tao
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: X.G. and Z.W. contributed equally to this work. The research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST).
PY - 2018/9/27
Y1 - 2018/9/27
N2 - A p-type phototransistor based on tin monoxide (SnO) thin film and a perovskite-mediated photogating effect to enhance the device performance are reported. Without the perovskite layer, the SnO thin film phototransistor exhibits a good figure of merit including on/off ratio (Ion/Ioff) over 103, hole mobility of 3.55 cm2 V−1 s−1, photoresponsivity of 1.83 × 103 A W−1, and detectivity of 2.11 × 1013 Jones at 655 nm; these values are among the highest reported for oxide-based devices. Furthermore, it is shown that when a hybrid perovskite MAPbI3 overlayer is deposited on the p-type SnO channel, the phototransistor behavior is significantly modified. Specifically, the field-effect mobility increases to 5.53 cm2 V−1 s−1 and the on/off ratio increases to 2.7 × 103 compared with an on/off ratio of 519 under dark. These effects can be ascribed to a perovskite-mediated photogating effect with favorable band alignment and interfacial charge transfer. This work not only introduces SnO as a new p-type phototransistor material but also presents a general approach to enhance the channel transport via coating a photoactive perovskite overlayer.
AB - A p-type phototransistor based on tin monoxide (SnO) thin film and a perovskite-mediated photogating effect to enhance the device performance are reported. Without the perovskite layer, the SnO thin film phototransistor exhibits a good figure of merit including on/off ratio (Ion/Ioff) over 103, hole mobility of 3.55 cm2 V−1 s−1, photoresponsivity of 1.83 × 103 A W−1, and detectivity of 2.11 × 1013 Jones at 655 nm; these values are among the highest reported for oxide-based devices. Furthermore, it is shown that when a hybrid perovskite MAPbI3 overlayer is deposited on the p-type SnO channel, the phototransistor behavior is significantly modified. Specifically, the field-effect mobility increases to 5.53 cm2 V−1 s−1 and the on/off ratio increases to 2.7 × 103 compared with an on/off ratio of 519 under dark. These effects can be ascribed to a perovskite-mediated photogating effect with favorable band alignment and interfacial charge transfer. This work not only introduces SnO as a new p-type phototransistor material but also presents a general approach to enhance the channel transport via coating a photoactive perovskite overlayer.
UR - http://hdl.handle.net/10754/630569
UR - https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.201800538
UR - http://www.scopus.com/inward/record.url?scp=85053891841&partnerID=8YFLogxK
U2 - 10.1002/aelm.201800538
DO - 10.1002/aelm.201800538
M3 - Article
SN - 2199-160X
VL - 5
SP - 1800538
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 1
ER -