P-type ZnSe homoepitaxial layers grown by molecular beam epitaxy with nitrogen radical doping

We have grown high-quality homoepitaxial layers of p-type ZnSe for the first time. The layers were grown on dry-etched ZnSe substrates by molecular-beam epitaxy with nitrogen radical doping. The p-type conduction with carrier concentration of 8.9×10¹⁵ cm^-3 at 300 K was confirmed by Hall measurement. Low-temperature photoluminescence from the N-doped ZnSe layers was dominated by single acceptor-bound exciton emission I₁ at 2.7931 eV, which indicates a formation of a number of shallow acceptors and strain free of the homoepitaxial layers.