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P-type ZnSe homoepitaxial layers grown by molecular beam epitaxy with nitrogen radical doping
K. Ohkawa
*
, T. Mitsuyu
*
Corresponding author for this work
Research output
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Contribution to journal
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Article
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peer-review
29
Scopus citations
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Keyphrases
Molecular Beam Epitaxy
100%
P-type
100%
Zinc Selenide
100%
Nitrogen-centered Radicals
100%
Homoepitaxial Layer
100%
Bound Exciton
25%
N-doping
25%
Carrier Concentration
25%
Low Temperature Photoluminescence
25%
Exciton Emission
25%
Strain-free
25%
Hall Measurement
25%
Shallow Acceptor
25%
Material Science
Molecular Beam Epitaxy
100%
Carrier Concentration
50%
Photoluminescence
50%