Abstract
The rear side of a silicon solar cell is often designed to minimize surface recombination, series resistance, and cost, but not necessarily parasitic absorption. We present a comprehensive study of parasitic absorption in the metal layer of solar cells with dielectric/metal rear reflectors. The sub-bandgap reflectance of a solar cell or test structure is proposed as an experimentally accessible probe of parasitic absorption, and it is correlated with short-circuit current density. The influence of surface texture, dielectric refractive index and thickness, and metal refractive index on sub-bandgap reflectance - and thus current - is then both calculated and measured. From the results, we formulate design rules that promote optimum infrared response in a wide variety of silicon solar cells.
Original language | English (US) |
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Pages (from-to) | 426-430 |
Number of pages | 5 |
Journal | Solar Energy Materials and Solar Cells |
Volume | 120 |
Issue number | PART A |
DOIs | |
State | Published - 2014 |
Externally published | Yes |
Keywords
- Light trapping
- PERL
- Parasitic absorption
- Rear reflector
- Silicon
- Solar cell
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films