Abstract
GaN and NiO/GaN electrodes were characterized by impedance spectroscopy measurements in 0.1 M NaOH. We observed the suppression of the surface states capacitance due to the modification of the chemical state of superficial Ga atoms by NiO. This result suggests that the carriers involved in the photocorrosion of GaN in alkaline conditions originate in its surface states. In addition, we characterized the epitaxial relationship between the NiO particles deposited on GaN by transmission electron microscopy, finding the NiO {111} ||GaN {0002} and NiO [220] ||GaN[1120] symmetry constraints.
Original language | English (US) |
---|---|
Article number | 211 |
Journal | Crystals |
Volume | 12 |
Issue number | 2 |
DOIs | |
State | Published - Feb 2022 |
Keywords
- GaN
- NiO/GaN epitaxy
- Photocatalysis
- Surface states
ASJC Scopus subject areas
- General Chemical Engineering
- General Materials Science
- Condensed Matter Physics
- Inorganic Chemistry