Passivation of Surface States in GaN by NiO Particles

Martin Velazquez-Rizo; Pavel Kirilenko; Daisuke Iida; Zhe Zhuang; Kazuhiro Ohkawa

doi:10.3390/cryst12020211

Passivation of Surface States in GaN by NiO Particles

Martin Velazquez-Rizo, Pavel Kirilenko, Daisuke Iida, Zhe Zhuang, Kazuhiro Ohkawa^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

GaN and NiO/GaN electrodes were characterized by impedance spectroscopy measurements in 0.1 M NaOH. We observed the suppression of the surface states capacitance due to the modification of the chemical state of superficial Ga atoms by NiO. This result suggests that the carriers involved in the photocorrosion of GaN in alkaline conditions originate in its surface states. In addition, we characterized the epitaxial relationship between the NiO particles deposited on GaN by transmission electron microscopy, finding the NiO {111} ||GaN {0002} and NiO [220] ||GaN[1120] symmetry constraints.

Original language	English (US)
Article number	211
Journal	Crystals
Volume	12
Issue number	2
DOIs	https://doi.org/10.3390/cryst12020211
State	Published - Feb 2022

Keywords

GaN
NiO/GaN epitaxy
Photocatalysis
Surface states

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Condensed Matter Physics
Inorganic Chemistry

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10.3390/cryst12020211

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title = "Passivation of Surface States in GaN by NiO Particles",

abstract = "GaN and NiO/GaN electrodes were characterized by impedance spectroscopy measurements in 0.1 M NaOH. We observed the suppression of the surface states capacitance due to the modification of the chemical state of superficial Ga atoms by NiO. This result suggests that the carriers involved in the photocorrosion of GaN in alkaline conditions originate in its surface states. In addition, we characterized the epitaxial relationship between the NiO particles deposited on GaN by transmission electron microscopy, finding the NiO {111} ||GaN {0002} and NiO [220] ||GaN[1120] symmetry constraints.",

keywords = "GaN, NiO/GaN epitaxy, Photocatalysis, Surface states",

author = "Martin Velazquez-Rizo and Pavel Kirilenko and Daisuke Iida and Zhe Zhuang and Kazuhiro Ohkawa",

note = "Funding Information: King Abdullah University of Science and Technology (BAS/1/1676-01-01). Publisher Copyright: {\textcopyright} 2022 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2022",

month = feb,

doi = "10.3390/cryst12020211",

language = "English (US)",

volume = "12",

journal = "Crystals",

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TY - JOUR

T1 - Passivation of Surface States in GaN by NiO Particles

AU - Velazquez-Rizo, Martin

AU - Kirilenko, Pavel

AU - Iida, Daisuke

AU - Zhuang, Zhe

AU - Ohkawa, Kazuhiro

PY - 2022/2

Y1 - 2022/2

N2 - GaN and NiO/GaN electrodes were characterized by impedance spectroscopy measurements in 0.1 M NaOH. We observed the suppression of the surface states capacitance due to the modification of the chemical state of superficial Ga atoms by NiO. This result suggests that the carriers involved in the photocorrosion of GaN in alkaline conditions originate in its surface states. In addition, we characterized the epitaxial relationship between the NiO particles deposited on GaN by transmission electron microscopy, finding the NiO {111} ||GaN {0002} and NiO [220] ||GaN[1120] symmetry constraints.

AB - GaN and NiO/GaN electrodes were characterized by impedance spectroscopy measurements in 0.1 M NaOH. We observed the suppression of the surface states capacitance due to the modification of the chemical state of superficial Ga atoms by NiO. This result suggests that the carriers involved in the photocorrosion of GaN in alkaline conditions originate in its surface states. In addition, we characterized the epitaxial relationship between the NiO particles deposited on GaN by transmission electron microscopy, finding the NiO {111} ||GaN {0002} and NiO [220] ||GaN[1120] symmetry constraints.

KW - GaN

KW - NiO/GaN epitaxy

KW - Photocatalysis

KW - Surface states

UR - http://www.scopus.com/inward/record.url?scp=85124010848&partnerID=8YFLogxK

U2 - 10.3390/cryst12020211

DO - 10.3390/cryst12020211

M3 - Article

AN - SCOPUS:85124010848

SN - 2073-4352

VL - 12

JO - Crystals

JF - Crystals

IS - 2

M1 - 211

ER -

Passivation of Surface States in GaN by NiO Particles

Abstract

Keywords

ASJC Scopus subject areas

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