Percolation behaviour in high mobility p-channel polymer/small-molecule blend organic field-effect transistors

Jeremy Smith; Martin Heeney; Iain McCulloch; Jennifer Nekuda Malik; Natalie Stingelin; Donal D.C. Bradley; Thomas D. Anthopoulos

doi:10.1016/j.orgel.2010.10.017

Percolation behaviour in high mobility p-channel polymer/small-molecule blend organic field-effect transistors

Jeremy Smith, Martin Heeney, Iain McCulloch, Jennifer Nekuda Malik, Natalie Stingelin, Donal D.C. Bradley, Thomas D. Anthopoulos

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

Organic transistors based on blends of 2,8-difluoro-5,11- bis(triethylsilylethynyl) anthradithiophene (diF-TES ADT) and poly(triarylamine) [PTAA] are strong candidates for application in future large-volume organic electronics because of their record breaking carrier mobility and environmental stability. Here we report on the dependence of hole transport on the composition of diF-TES ADT:PTAA blends. Maximum mobility is obtained only for blends containing ≥39 wt.% diF-TES ADT. At compositions below this threshold the hole mobility is drastically reduced and is found to be equal to that of the neat polymer matrix, i.e. PTAA (∼10-3 cm2/V s). Scanning atomic force and polarised light microscopy, combined with differential scanning calorimetry, show that this threshold corresponds to the appearance of crystalline, acene-rich regions in such blend films, and the formation of high mobility conduction pathways between the source and drain electrodes. The dependence of hole mobility on diF-TES ADT concentration can be modelled using a simple percolation model. The present results provide important insights into the microstructure evolution in this high performance semiconducting blend and could prove valuable for the development of the next generation organic transistors. © 2010 Elsevier B.V. All rights reserved.

Original language	English (US)
Pages (from-to)	143-147
Number of pages	5
Journal	Organic Electronics
Volume	12
Issue number	1
DOIs	https://doi.org/10.1016/j.orgel.2010.10.017
State	Published - Jan 1 2011
Externally published	Yes

ASJC Scopus subject areas

Materials Chemistry
Biomaterials
General Chemistry
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Condensed Matter Physics

Access to Document

10.1016/j.orgel.2010.10.017

Cite this

@article{ac5ce990bfd9436db79ea580ff2d0c5d,

title = "Percolation behaviour in high mobility p-channel polymer/small-molecule blend organic field-effect transistors",

abstract = "Organic transistors based on blends of 2,8-difluoro-5,11- bis(triethylsilylethynyl) anthradithiophene (diF-TES ADT) and poly(triarylamine) [PTAA] are strong candidates for application in future large-volume organic electronics because of their record breaking carrier mobility and environmental stability. Here we report on the dependence of hole transport on the composition of diF-TES ADT:PTAA blends. Maximum mobility is obtained only for blends containing ≥39 wt.% diF-TES ADT. At compositions below this threshold the hole mobility is drastically reduced and is found to be equal to that of the neat polymer matrix, i.e. PTAA (∼10-3 cm2/V s). Scanning atomic force and polarised light microscopy, combined with differential scanning calorimetry, show that this threshold corresponds to the appearance of crystalline, acene-rich regions in such blend films, and the formation of high mobility conduction pathways between the source and drain electrodes. The dependence of hole mobility on diF-TES ADT concentration can be modelled using a simple percolation model. The present results provide important insights into the microstructure evolution in this high performance semiconducting blend and could prove valuable for the development of the next generation organic transistors. {\textcopyright} 2010 Elsevier B.V. All rights reserved.",

author = "Jeremy Smith and Martin Heeney and Iain McCulloch and Malik, {Jennifer Nekuda} and Natalie Stingelin and Bradley, {Donal D.C.} and Anthopoulos, {Thomas D.}",

note = "Generated from Scopus record by KAUST IRTS on 2023-02-14",

year = "2011",

month = jan,

day = "1",

doi = "10.1016/j.orgel.2010.10.017",

language = "English (US)",

volume = "12",

pages = "143--147",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Percolation behaviour in high mobility p-channel polymer/small-molecule blend organic field-effect transistors

AU - Smith, Jeremy

AU - Heeney, Martin

AU - McCulloch, Iain

AU - Malik, Jennifer Nekuda

AU - Stingelin, Natalie

AU - Bradley, Donal D.C.

AU - Anthopoulos, Thomas D.

N1 - Generated from Scopus record by KAUST IRTS on 2023-02-14

PY - 2011/1/1

Y1 - 2011/1/1

N2 - Organic transistors based on blends of 2,8-difluoro-5,11- bis(triethylsilylethynyl) anthradithiophene (diF-TES ADT) and poly(triarylamine) [PTAA] are strong candidates for application in future large-volume organic electronics because of their record breaking carrier mobility and environmental stability. Here we report on the dependence of hole transport on the composition of diF-TES ADT:PTAA blends. Maximum mobility is obtained only for blends containing ≥39 wt.% diF-TES ADT. At compositions below this threshold the hole mobility is drastically reduced and is found to be equal to that of the neat polymer matrix, i.e. PTAA (∼10-3 cm2/V s). Scanning atomic force and polarised light microscopy, combined with differential scanning calorimetry, show that this threshold corresponds to the appearance of crystalline, acene-rich regions in such blend films, and the formation of high mobility conduction pathways between the source and drain electrodes. The dependence of hole mobility on diF-TES ADT concentration can be modelled using a simple percolation model. The present results provide important insights into the microstructure evolution in this high performance semiconducting blend and could prove valuable for the development of the next generation organic transistors. © 2010 Elsevier B.V. All rights reserved.

AB - Organic transistors based on blends of 2,8-difluoro-5,11- bis(triethylsilylethynyl) anthradithiophene (diF-TES ADT) and poly(triarylamine) [PTAA] are strong candidates for application in future large-volume organic electronics because of their record breaking carrier mobility and environmental stability. Here we report on the dependence of hole transport on the composition of diF-TES ADT:PTAA blends. Maximum mobility is obtained only for blends containing ≥39 wt.% diF-TES ADT. At compositions below this threshold the hole mobility is drastically reduced and is found to be equal to that of the neat polymer matrix, i.e. PTAA (∼10-3 cm2/V s). Scanning atomic force and polarised light microscopy, combined with differential scanning calorimetry, show that this threshold corresponds to the appearance of crystalline, acene-rich regions in such blend films, and the formation of high mobility conduction pathways between the source and drain electrodes. The dependence of hole mobility on diF-TES ADT concentration can be modelled using a simple percolation model. The present results provide important insights into the microstructure evolution in this high performance semiconducting blend and could prove valuable for the development of the next generation organic transistors. © 2010 Elsevier B.V. All rights reserved.

UR - https://linkinghub.elsevier.com/retrieve/pii/S1566119910003423

UR - http://www.scopus.com/inward/record.url?scp=78549272386&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2010.10.017

DO - 10.1016/j.orgel.2010.10.017

M3 - Article

SN - 1566-1199

VL - 12

SP - 143

EP - 147

JO - Organic Electronics

JF - Organic Electronics

IS - 1

ER -

Percolation behaviour in high mobility p-channel polymer/small-molecule blend organic field-effect transistors

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this