Performance Improvement of InGaN-Based LEDs via a Current-Blocking Region Prepared via Hydrogen Passivation

Pavel Kirilenko, Cesur Altinkaya, Daisuke Iida, Kazuhiro Ohkawa*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We report p-GaN passivation via hydrogen plasma used to create current blocking regions (CBRs) in InGaN-based green LEDs with standard dimensions of 280 × 650 μm2. The CBRs are created before mesa etching in two variants: underneath the opaque metal p-pad and both underneath the p-pad and along the device’s mesa perimeter. The peak EQE increased by 13% and 23% in the first and the second cases, respectively, in comparison to the reference LED with no CBR. With a high injection current of 50 A/cm2, the EQE value increased by 2% in the case of CBRs underneath the p-pad as well as by 14% in the case of CBRs both underneath the p-pad and along the mesa perimeter (relative to the reference sample with no CBR).

Original languageEnglish (US)
Article number1733
JournalCrystals
Volume12
Issue number12
DOIs
StatePublished - Dec 2022

Keywords

  • current blocking layer
  • hydrogen passivation
  • InGaN
  • injection efficiency
  • LED
  • light extraction efficiency
  • reactive ion etching

ASJC Scopus subject areas

  • General Chemical Engineering
  • General Materials Science
  • Condensed Matter Physics
  • Inorganic Chemistry

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