Abstract
We report p-GaN passivation via hydrogen plasma used to create current blocking regions (CBRs) in InGaN-based green LEDs with standard dimensions of 280 × 650 μm2. The CBRs are created before mesa etching in two variants: underneath the opaque metal p-pad and both underneath the p-pad and along the device’s mesa perimeter. The peak EQE increased by 13% and 23% in the first and the second cases, respectively, in comparison to the reference LED with no CBR. With a high injection current of 50 A/cm2, the EQE value increased by 2% in the case of CBRs underneath the p-pad as well as by 14% in the case of CBRs both underneath the p-pad and along the mesa perimeter (relative to the reference sample with no CBR).
Original language | English (US) |
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Article number | 1733 |
Journal | Crystals |
Volume | 12 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2022 |
Keywords
- current blocking layer
- hydrogen passivation
- InGaN
- injection efficiency
- LED
- light extraction efficiency
- reactive ion etching
ASJC Scopus subject areas
- General Chemical Engineering
- General Materials Science
- Condensed Matter Physics
- Inorganic Chemistry