Phosphorus Doped Zn 1- x Mg x O Nanowire Arrays

S. S. Lin, J. I. Hong, J. H. Song, Y. Zhu, H. P. He, Z. Xu, Y. G. Wei, Y. Ding, R. L. Snyder, Z. L. Wang

Research output: Contribution to journalArticlepeer-review

64 Scopus citations


We demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of ∼140 meV Is identified by temperaturedependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application In high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices. © 2009 American Chemical Society.
Original languageEnglish (US)
Pages (from-to)3877-3882
Number of pages6
JournalNano Letters
Issue number11
StatePublished - Nov 11 2009
Externally publishedYes


Dive into the research topics of 'Phosphorus Doped Zn 1- x Mg x O Nanowire Arrays'. Together they form a unique fingerprint.

Cite this