Photoassisted Electric Field Modulation of Multiple Nonvolatile Resistance States in Highly Strained Epitaxial BiFeO3 Heterostructures

Dong Li; Dongxing Zheng; Chao Jin; Peng Li; Xinjun Liu; Wanchao Zheng; Haili Bai

doi:10.1002/aelm.201800171

Photoassisted Electric Field Modulation of Multiple Nonvolatile Resistance States in Highly Strained Epitaxial BiFeO₃ Heterostructures

Dong Li, Dongxing Zheng, Chao Jin, Peng Li, Xinjun Liu, Wanchao Zheng, Haili Bai^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

For developing the high-density and high-speed nonvolatile memory storage, the photoassisted electric field modulation of resistive switching in ferroelectric heterostructures is studied. Highly strained epitaxial BiFeO₃ heterostructures are fabricated on LaAlO₃ substrates by magnetron sputtering. The electric field-modulated wide range multilevel resistance and switchable photovoltaic effects are observed in these heterostructures. It is found that the electric field-modulated interfacial barrier can be further affected by the photogenerated excitons. Therefore, a co-modulation of light illumination and electric field on the resistive switching behavior is demonstrated, which generates four nonvolatile resistance states.

Original language	English (US)
Article number	1800171
Journal	Advanced Electronic Materials
Volume	4
Issue number	7
DOIs	https://doi.org/10.1002/aelm.201800171
State	Published - Jul 2018
Externally published	Yes

Keywords

bismuth ferrite
ferroelectric
photovoltaic effect
polarization
resistive switching

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1002/aelm.201800171

Cite this

@article{dbc3b93682e04356b218cdfb31f345a4,

title = "Photoassisted Electric Field Modulation of Multiple Nonvolatile Resistance States in Highly Strained Epitaxial BiFeO3 Heterostructures",

abstract = "For developing the high-density and high-speed nonvolatile memory storage, the photoassisted electric field modulation of resistive switching in ferroelectric heterostructures is studied. Highly strained epitaxial BiFeO3 heterostructures are fabricated on LaAlO3 substrates by magnetron sputtering. The electric field-modulated wide range multilevel resistance and switchable photovoltaic effects are observed in these heterostructures. It is found that the electric field-modulated interfacial barrier can be further affected by the photogenerated excitons. Therefore, a co-modulation of light illumination and electric field on the resistive switching behavior is demonstrated, which generates four nonvolatile resistance states.",

keywords = "bismuth ferrite, ferroelectric, photovoltaic effect, polarization, resistive switching",

author = "Dong Li and Dongxing Zheng and Chao Jin and Peng Li and Xinjun Liu and Wanchao Zheng and Haili Bai",

note = "Publisher Copyright: {\textcopyright} 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2018",

month = jul,

doi = "10.1002/aelm.201800171",

language = "English (US)",

volume = "4",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

publisher = "Wiley",

number = "7",

}

TY - JOUR

T1 - Photoassisted Electric Field Modulation of Multiple Nonvolatile Resistance States in Highly Strained Epitaxial BiFeO3 Heterostructures

AU - Li, Dong

AU - Zheng, Dongxing

AU - Jin, Chao

AU - Li, Peng

AU - Liu, Xinjun

AU - Zheng, Wanchao

AU - Bai, Haili

PY - 2018/7

Y1 - 2018/7

N2 - For developing the high-density and high-speed nonvolatile memory storage, the photoassisted electric field modulation of resistive switching in ferroelectric heterostructures is studied. Highly strained epitaxial BiFeO3 heterostructures are fabricated on LaAlO3 substrates by magnetron sputtering. The electric field-modulated wide range multilevel resistance and switchable photovoltaic effects are observed in these heterostructures. It is found that the electric field-modulated interfacial barrier can be further affected by the photogenerated excitons. Therefore, a co-modulation of light illumination and electric field on the resistive switching behavior is demonstrated, which generates four nonvolatile resistance states.

AB - For developing the high-density and high-speed nonvolatile memory storage, the photoassisted electric field modulation of resistive switching in ferroelectric heterostructures is studied. Highly strained epitaxial BiFeO3 heterostructures are fabricated on LaAlO3 substrates by magnetron sputtering. The electric field-modulated wide range multilevel resistance and switchable photovoltaic effects are observed in these heterostructures. It is found that the electric field-modulated interfacial barrier can be further affected by the photogenerated excitons. Therefore, a co-modulation of light illumination and electric field on the resistive switching behavior is demonstrated, which generates four nonvolatile resistance states.

KW - bismuth ferrite

KW - ferroelectric

KW - photovoltaic effect

KW - polarization

KW - resistive switching

UR - http://www.scopus.com/inward/record.url?scp=85047623370&partnerID=8YFLogxK

U2 - 10.1002/aelm.201800171

DO - 10.1002/aelm.201800171

M3 - Article

AN - SCOPUS:85047623370

SN - 2199-160X

VL - 4

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 7

M1 - 1800171

ER -