Abstract
A single ZnO nanowire (NW) photodetector was fabricated and measured under different excitation intensities. The photoconductive internal gain was decreased as the excitation intensity was increased, indicating the hole-trapping photoconduction mechanism of ZnO NWs. As Au nanoparticles are decorated at the surface of a ZnO NW, the local space charge region is formed due to the existence of Schottky junction. This enhancement of the surface electric field results in more pronounced electron-hole separation effect, which then prolongs the lifetime of photogenerated electron and consequently increases the photocurrent. This study provides an easy way to enhance the sensitivity of photodetectors.
Original language | English (US) |
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Title of host publication | INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings |
Pages | 1181-1182 |
Number of pages | 2 |
DOIs | |
State | Published - 2010 |
Externally published | Yes |
Event | 2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: Jan 3 2010 → Jan 8 2010 |
Other
Other | 2010 3rd International Nanoelectronics Conference, INEC 2010 |
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Country/Territory | China |
City | Hongkong |
Period | 01/3/10 → 01/8/10 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering