Photocurrent generation in Ge nanocrystal/Si systems

Paola Castrucci; Silvano Del Gobbo; Eugen Speiser; Manuela Scarselli; Maurizio De Crescenzi; Guillaume Amiard; Antoine Ronda; Isabelle Berbezier

doi:10.1166/jnn.2011.4285

Photocurrent generation in Ge nanocrystal/Si systems

Paola Castrucci^*, Silvano Del Gobbo, Eugen Speiser, Manuela Scarselli, Maurizio De Crescenzi, Guillaume Amiard, Antoine Ronda, Isabelle Berbezier

^*Corresponding author for this work

KAUST Solar Center

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report on the generation of photocurrent in the visible and ultraviolet range from planar devices built from the Ge nanocrystals grown on a heavy n-doped Si(001) substrate covered with 5 nm thick thermally grown SiO ₂ . These Ge nanostructures/SiO ₂ /n ⁺ -Si devices are shown to generate photocurrent with an Incident-Photon-to-electron Conversion Efficiency (IPCE) spectral range depending on the Ge nanocrystals size. The increase of the IPCE value of our devices in the 350-600 nm range correlates well with the absorbance of Ge.

Original language	English (US)
Pages (from-to)	9227-9231
Number of pages	5
Journal	Journal of Nanoscience and Nanotechnology
Volume	11
Issue number	10
DOIs	https://doi.org/10.1166/jnn.2011.4285
State	Published - Dec 1 2011

Keywords

Ge Nanoparticles
Photovoltaic Response

ASJC Scopus subject areas

Medicine(all)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1166/jnn.2011.4285

Cite this

@article{637c94dd7663417cb6f0c425647a9882,

title = "Photocurrent generation in Ge nanocrystal/Si systems",

abstract = " We report on the generation of photocurrent in the visible and ultraviolet range from planar devices built from the Ge nanocrystals grown on a heavy n-doped Si(001) substrate covered with 5 nm thick thermally grown SiO 2 . These Ge nanostructures/SiO 2 /n + -Si devices are shown to generate photocurrent with an Incident-Photon-to-electron Conversion Efficiency (IPCE) spectral range depending on the Ge nanocrystals size. The increase of the IPCE value of our devices in the 350-600 nm range correlates well with the absorbance of Ge.",

keywords = "Ge Nanoparticles, Photovoltaic Response",

author = "Paola Castrucci and {Del Gobbo}, Silvano and Eugen Speiser and Manuela Scarselli and {De Crescenzi}, Maurizio and Guillaume Amiard and Antoine Ronda and Isabelle Berbezier",

year = "2011",

month = dec,

day = "1",

doi = "10.1166/jnn.2011.4285",

language = "English (US)",

volume = "11",

pages = "9227--9231",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

number = "10",

}

TY - JOUR

T1 - Photocurrent generation in Ge nanocrystal/Si systems

AU - Castrucci, Paola

AU - Del Gobbo, Silvano

AU - Speiser, Eugen

AU - Scarselli, Manuela

AU - De Crescenzi, Maurizio

AU - Amiard, Guillaume

AU - Ronda, Antoine

AU - Berbezier, Isabelle

PY - 2011/12/1

Y1 - 2011/12/1

N2 - We report on the generation of photocurrent in the visible and ultraviolet range from planar devices built from the Ge nanocrystals grown on a heavy n-doped Si(001) substrate covered with 5 nm thick thermally grown SiO 2 . These Ge nanostructures/SiO 2 /n + -Si devices are shown to generate photocurrent with an Incident-Photon-to-electron Conversion Efficiency (IPCE) spectral range depending on the Ge nanocrystals size. The increase of the IPCE value of our devices in the 350-600 nm range correlates well with the absorbance of Ge.

AB - We report on the generation of photocurrent in the visible and ultraviolet range from planar devices built from the Ge nanocrystals grown on a heavy n-doped Si(001) substrate covered with 5 nm thick thermally grown SiO 2 . These Ge nanostructures/SiO 2 /n + -Si devices are shown to generate photocurrent with an Incident-Photon-to-electron Conversion Efficiency (IPCE) spectral range depending on the Ge nanocrystals size. The increase of the IPCE value of our devices in the 350-600 nm range correlates well with the absorbance of Ge.

KW - Ge Nanoparticles

KW - Photovoltaic Response

UR - http://www.scopus.com/inward/record.url?scp=84857170572&partnerID=8YFLogxK

U2 - 10.1166/jnn.2011.4285

DO - 10.1166/jnn.2011.4285

M3 - Article

C2 - 22400328

AN - SCOPUS:84857170572

SN - 1533-4880

VL - 11

SP - 9227

EP - 9231

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 10

ER -

Photocurrent generation in Ge nanocrystal/Si systems

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this