Photocurrent generation in Ge nanocrystal/Si systems

Paola Castrucci*, Silvano Del Gobbo, Eugen Speiser, Manuela Scarselli, Maurizio De Crescenzi, Guillaume Amiard, Antoine Ronda, Isabelle Berbezier

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


We report on the generation of photocurrent in the visible and ultraviolet range from planar devices built from the Ge nanocrystals grown on a heavy n-doped Si(001) substrate covered with 5 nm thick thermally grown SiO 2 . These Ge nanostructures/SiO 2 /n + -Si devices are shown to generate photocurrent with an Incident-Photon-to-electron Conversion Efficiency (IPCE) spectral range depending on the Ge nanocrystals size. The increase of the IPCE value of our devices in the 350-600 nm range correlates well with the absorbance of Ge.

Original languageEnglish (US)
Pages (from-to)9227-9231
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Issue number10
StatePublished - Dec 1 2011


  • Ge Nanoparticles
  • Photovoltaic Response

ASJC Scopus subject areas

  • Medicine(all)


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