Photocurrent generation in Ge nanocrystal/Si systems

Paola Castrucci; Silvano Del Gobbo; Eugen Speiser; Manuela Scarselli; Maurizio De Crescenzi; Guillaume Amiard; Antoine Ronda; Isabelle Berbezier

doi:10.1166/jnn.2011.4285

Photocurrent generation in Ge nanocrystal/Si systems

Paola Castrucci^*, Silvano Del Gobbo, Eugen Speiser, Manuela Scarselli, Maurizio De Crescenzi, Guillaume Amiard, Antoine Ronda, Isabelle Berbezier

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report on the generation of photocurrent in the visible and ultraviolet range from planar devices built from the Ge nanocrystals grown on a heavy n-doped Si(001) substrate covered with 5 nm thick thermally grown SiO ₂. These Ge nanostructures/SiO ₂/n ⁺-Si devices are shown to generate photocurrent with an Incident-Photon-to-electron Conversion Efficiency (IPCE) spectral range depending on the Ge nanocrystals size. The increase of the IPCE value of our devices in the 350-600 nm range correlates well with the absorbance of Ge.

Original language	English (US)
Pages (from-to)	9227-9231
Number of pages	5
Journal	Journal of nanoscience and nanotechnology
Volume	11
Issue number	10
DOIs	https://doi.org/10.1166/jnn.2011.4285
State	Published - 2011
Externally published	Yes

Keywords

Ge Nanoparticles
Photovoltaic Response

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Bioengineering
Biomedical Engineering
General Materials Science

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1166/jnn.2011.4285

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title = "Photocurrent generation in Ge nanocrystal/Si systems",

abstract = "We report on the generation of photocurrent in the visible and ultraviolet range from planar devices built from the Ge nanocrystals grown on a heavy n-doped Si(001) substrate covered with 5 nm thick thermally grown SiO 2. These Ge nanostructures/SiO 2/n +-Si devices are shown to generate photocurrent with an Incident-Photon-to-electron Conversion Efficiency (IPCE) spectral range depending on the Ge nanocrystals size. The increase of the IPCE value of our devices in the 350-600 nm range correlates well with the absorbance of Ge.",

keywords = "Ge Nanoparticles, Photovoltaic Response",

author = "Paola Castrucci and {Del Gobbo}, Silvano and Eugen Speiser and Manuela Scarselli and {De Crescenzi}, Maurizio and Guillaume Amiard and Antoine Ronda and Isabelle Berbezier",

year = "2011",

doi = "10.1166/jnn.2011.4285",

language = "English (US)",

volume = "11",

pages = "9227--9231",

journal = "Journal of nanoscience and nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

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}

TY - JOUR

T1 - Photocurrent generation in Ge nanocrystal/Si systems

AU - Castrucci, Paola

AU - Del Gobbo, Silvano

AU - Speiser, Eugen

AU - Scarselli, Manuela

AU - De Crescenzi, Maurizio

AU - Amiard, Guillaume

AU - Ronda, Antoine

AU - Berbezier, Isabelle

PY - 2011

Y1 - 2011

N2 - We report on the generation of photocurrent in the visible and ultraviolet range from planar devices built from the Ge nanocrystals grown on a heavy n-doped Si(001) substrate covered with 5 nm thick thermally grown SiO 2. These Ge nanostructures/SiO 2/n +-Si devices are shown to generate photocurrent with an Incident-Photon-to-electron Conversion Efficiency (IPCE) spectral range depending on the Ge nanocrystals size. The increase of the IPCE value of our devices in the 350-600 nm range correlates well with the absorbance of Ge.

AB - We report on the generation of photocurrent in the visible and ultraviolet range from planar devices built from the Ge nanocrystals grown on a heavy n-doped Si(001) substrate covered with 5 nm thick thermally grown SiO 2. These Ge nanostructures/SiO 2/n +-Si devices are shown to generate photocurrent with an Incident-Photon-to-electron Conversion Efficiency (IPCE) spectral range depending on the Ge nanocrystals size. The increase of the IPCE value of our devices in the 350-600 nm range correlates well with the absorbance of Ge.

KW - Ge Nanoparticles

KW - Photovoltaic Response

UR - http://www.scopus.com/inward/record.url?scp=84857170572&partnerID=8YFLogxK

U2 - 10.1166/jnn.2011.4285

DO - 10.1166/jnn.2011.4285

M3 - Article

C2 - 22400328

AN - SCOPUS:84857170572

SN - 1533-4880

VL - 11

SP - 9227

EP - 9231

JO - Journal of nanoscience and nanotechnology

JF - Journal of nanoscience and nanotechnology

IS - 10

ER -

Photocurrent generation in Ge nanocrystal/Si systems

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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