Photocurrent Modulation in a Multilayer Molybdenum Ditelluride Transistor

Muhammad Atif Khan, Danial Khan, Amit Kumar Goyal, Yehia Massoud*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


We have fabricated a phototransistor based on multilayer MoTe2 and investigated its optical response. Under dark, the transistor exhibits ambipolar behavior with an on-off ratio of around 1000 for hole transport. The photocurrent of the transistor is modulated by illuminating the transistor with laser light and varying its power and the electrostatic gate voltage. We investigated the correlation between the laser power and the on/off ratio, photocurrent, and maximum current of the device. Finally, we analyzed the regions in the transfer curve that are least sensitive and most sensitive to incident laser light.

Original languageEnglish (US)
Title of host publicationOptoelectronic Devices and Integration XII
EditorsXuping Zhang, Baojun Li, Changyuan Yu, Xinliang Zhang
ISBN (Electronic)9781510667778
StatePublished - 2023
EventOptoelectronic Devices and Integration XII 2023 - Beijing, China
Duration: Oct 14 2023Oct 16 2023

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceOptoelectronic Devices and Integration XII 2023


  • 2D transistor
  • MoTe2
  • Photocurrent
  • Phototransistor
  • Variable Power Laser

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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