Photoelectrochemical H2 gas generation improvement with thin p-type GaN layer on n-type GaN

Katsushi Fujii; Masato Ono; Yasuhiro Iwaki; Takafumi Yao; Kazuhiro Ohkawa

doi:10.1149/1.3039773

Photoelectrochemical H2 gas generation improvement with thin p-type GaN layer on n-type GaN

Katsushi Fujii^*, Masato Ono, Yasuhiro Iwaki, Takafumi Yao, Kazuhiro Ohkawa

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Existence of a p-n junction in a depletion layer is expected to change band energy distribution. The structures of thin p-type GaN on n-type GaN were investigated for the working electrode of the photoelectrochemical reactions. When the p-type layer thickness was thinner than the depletion layer, lower flatband potential was observed. The photocurrent density and the H₂ gas generation also increased when the n-type GaN working electrode with thin p-type layer was used.

Original language	English (US)
Title of host publication	ECS Transactions - Fundamentals of Energy Storage and Conversion
Pages	177-183
Number of pages	7
Volume	13
Edition	17
DOIs	https://doi.org/10.1149/1.3039773
State	Published - 2008
Externally published	Yes
Event	Fundamentals of Energy Storage and Conversion - 213th Meeting of the Electrochemical Society - Phoenix, AZ, United States Duration: May 18 2008 → May 23 2008

Other

Other	Fundamentals of Energy Storage and Conversion - 213th Meeting of the Electrochemical Society
Country/Territory	United States
City	Phoenix, AZ
Period	05/18/08 → 05/23/08

ASJC Scopus subject areas

Engineering(all)

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title = "Photoelectrochemical H2 gas generation improvement with thin p-type GaN layer on n-type GaN",

abstract = "Existence of a p-n junction in a depletion layer is expected to change band energy distribution. The structures of thin p-type GaN on n-type GaN were investigated for the working electrode of the photoelectrochemical reactions. When the p-type layer thickness was thinner than the depletion layer, lower flatband potential was observed. The photocurrent density and the H2 gas generation also increased when the n-type GaN working electrode with thin p-type layer was used.",

author = "Katsushi Fujii and Masato Ono and Yasuhiro Iwaki and Takafumi Yao and Kazuhiro Ohkawa",

year = "2008",

doi = "10.1149/1.3039773",

language = "English (US)",

isbn = "9781605606552",

volume = "13",

pages = "177--183",

booktitle = "ECS Transactions - Fundamentals of Energy Storage and Conversion",

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note = "Fundamentals of Energy Storage and Conversion - 213th Meeting of the Electrochemical Society ; Conference date: 18-05-2008 Through 23-05-2008",

}

Fujii, K, Ono, M, Iwaki, Y, Yao, T & Ohkawa, K 2008, Photoelectrochemical H2 gas generation improvement with thin p-type GaN layer on n-type GaN. in ECS Transactions - Fundamentals of Energy Storage and Conversion. 17 edn, vol. 13, pp. 177-183, Fundamentals of Energy Storage and Conversion - 213th Meeting of the Electrochemical Society, Phoenix, AZ, United States, 05/18/08. https://doi.org/10.1149/1.3039773

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T1 - Photoelectrochemical H2 gas generation improvement with thin p-type GaN layer on n-type GaN

AU - Fujii, Katsushi

AU - Ono, Masato

AU - Iwaki, Yasuhiro

AU - Yao, Takafumi

AU - Ohkawa, Kazuhiro

PY - 2008

Y1 - 2008

N2 - Existence of a p-n junction in a depletion layer is expected to change band energy distribution. The structures of thin p-type GaN on n-type GaN were investigated for the working electrode of the photoelectrochemical reactions. When the p-type layer thickness was thinner than the depletion layer, lower flatband potential was observed. The photocurrent density and the H2 gas generation also increased when the n-type GaN working electrode with thin p-type layer was used.

AB - Existence of a p-n junction in a depletion layer is expected to change band energy distribution. The structures of thin p-type GaN on n-type GaN were investigated for the working electrode of the photoelectrochemical reactions. When the p-type layer thickness was thinner than the depletion layer, lower flatband potential was observed. The photocurrent density and the H2 gas generation also increased when the n-type GaN working electrode with thin p-type layer was used.

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DO - 10.1149/1.3039773

M3 - Conference contribution

AN - SCOPUS:67649216124

SN - 9781605606552

VL - 13

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BT - ECS Transactions - Fundamentals of Energy Storage and Conversion

T2 - Fundamentals of Energy Storage and Conversion - 213th Meeting of the Electrochemical Society

Y2 - 18 May 2008 through 23 May 2008

ER -

Photoelectrochemical H2 gas generation improvement with thin p-type GaN layer on n-type GaN

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