@article{2485d01045e148e484cac6fa96de3c26,
title = "Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates",
abstract = "We demonstrate a thin-film flip-chip (TFFC) process for LEDs grown on freestanding c-plane GaN substrates. LEDs are transferred from a bulk GaN substrate to a sapphire submount via a photoelectrochemical (PEC) undercut etch. This PEC liftoff method allows for substrate reuse and exposes the N-face of the LEDs for additional roughening. The LEDs emitted at a wavelength of 432 nm with a turn on voltage of ~3 V. Etching the LEDs in heated KOH after transferring them to a sapphire submount increased the peak external quantum efficiency (EQE) by 42.5% from 9.9% (unintentionally roughened) to 14.1% (intentionally roughened).",
author = "David Hwang and Yonkee, {Benjamin P.} and Addin, {Burhan Saif} and Farrell, {Robert M.} and Shuji Nakamura and Speck, {James S.} and Steven DenBaars",
note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: KACST-KAUST-UCSB Solid State Lighting Program (SSLP) and the Solid State Lighting & Energy Electronics Center (SSLEEC); National Science Foundation (NSF) National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); UCSB MRL, supported by the NSF MRSEC Program (DMR05-20415). D. H. was supported by the National Science Foundation Graduate Research Fellowship under Grant No. DGE-1144085. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",
year = "2016",
month = sep,
day = "23",
doi = "10.1364/oe.24.022875",
language = "English (US)",
volume = "24",
pages = "22875",
journal = "Optics Express",
issn = "1094-4087",
publisher = "Optica Publishing Group",
number = "20",
}