Photoelectrochemical properties of InGaN for H2 generation from aqueous water

Katsushi Fujii; Kazuhide Kusakabe; Kazuhiro Ohkawa

doi:10.1143/JJAP.44.7433

Photoelectrochemical properties of InGaN for H₂ generation from aqueous water

Katsushi Fujii^*, Kazuhide Kusakabe, Kazuhiro Ohkawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

83 Scopus citations

Abstract

The photoelectrochemical properties of In_xGa_1-xN (x = 0.02 and 0.09) were compared with those of GaN. The band-edge potentials of In_xGa_1-xN were determined by the Mott-Schottky plot for the first time. The gas generation from a counterelectrode using the In _0.02Ga_0.91N working electrode was the highest of the three samples. Band-edge potentials and the light absorption of a working photoelectrode presumably affect the gas generation efficiency.

Original language	English (US)
Pages (from-to)	7433-7435
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.44.7433
State	Published - Oct 11 2005
Externally published	Yes

Keywords

Indium gallium nitride
Photoelectrochemical cells
Photoelectrolysis
Semiconductor-electrolyte contacts
Water splitting

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1143/JJAP.44.7433

Cite this

@article{8dd5b7ad825d46388e7499baa3d6aa83,

title = "Photoelectrochemical properties of InGaN for H2 generation from aqueous water",

abstract = "The photoelectrochemical properties of InxGa1-xN (x = 0.02 and 0.09) were compared with those of GaN. The band-edge potentials of InxGa1-xN were determined by the Mott-Schottky plot for the first time. The gas generation from a counterelectrode using the In 0.02Ga0.91N working electrode was the highest of the three samples. Band-edge potentials and the light absorption of a working photoelectrode presumably affect the gas generation efficiency.",

keywords = "Indium gallium nitride, Photoelectrochemical cells, Photoelectrolysis, Semiconductor-electrolyte contacts, Water splitting",

author = "Katsushi Fujii and Kazuhide Kusakabe and Kazuhiro Ohkawa",

year = "2005",

month = oct,

day = "11",

doi = "10.1143/JJAP.44.7433",

language = "English (US)",

volume = "44",

pages = "7433--7435",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "10",

}

TY - JOUR

T1 - Photoelectrochemical properties of InGaN for H2 generation from aqueous water

AU - Fujii, Katsushi

AU - Kusakabe, Kazuhide

AU - Ohkawa, Kazuhiro

PY - 2005/10/11

Y1 - 2005/10/11

N2 - The photoelectrochemical properties of InxGa1-xN (x = 0.02 and 0.09) were compared with those of GaN. The band-edge potentials of InxGa1-xN were determined by the Mott-Schottky plot for the first time. The gas generation from a counterelectrode using the In 0.02Ga0.91N working electrode was the highest of the three samples. Band-edge potentials and the light absorption of a working photoelectrode presumably affect the gas generation efficiency.

AB - The photoelectrochemical properties of InxGa1-xN (x = 0.02 and 0.09) were compared with those of GaN. The band-edge potentials of InxGa1-xN were determined by the Mott-Schottky plot for the first time. The gas generation from a counterelectrode using the In 0.02Ga0.91N working electrode was the highest of the three samples. Band-edge potentials and the light absorption of a working photoelectrode presumably affect the gas generation efficiency.

KW - Indium gallium nitride

KW - Photoelectrochemical cells

KW - Photoelectrolysis

KW - Semiconductor-electrolyte contacts

KW - Water splitting

UR - http://www.scopus.com/inward/record.url?scp=31644433504&partnerID=8YFLogxK

U2 - 10.1143/JJAP.44.7433

DO - 10.1143/JJAP.44.7433

M3 - Article

AN - SCOPUS:31644433504

SN - 0021-4922

VL - 44

SP - 7433

EP - 7435

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 10

ER -