@inproceedings{5562c738c6f9445eba8c5ee6cd1c7352,
title = "Photoelectrochemical reactions and hydrogen evolution of III-nitride semiconductors",
abstract = "Photoelectrochemical properties of visible light absorption, hydrogen evolution at zero bias, and stability of working electrode for III-nitrides were demonstrated. Photoassist hydrogen evolution from Pt counterelectrode was observed using n-type InxGa1-xN with 408 nm band-edge emission at room temperature. Hydrogen evolution was achieved without bias using crystallographic and electric optimized n-type GaN. Over 5 h operation of the photoelectrochemical reaction using n-type GaN was revealed. Details of these properties are discussed.",
keywords = "GaN, Hydrogen evolution, III-nitrides, Photoelectrolysis",
author = "K. Fujii and T. Yao and K. Ohkawa",
year = "2008",
doi = "10.1063/1.2896975",
language = "English (US)",
isbn = "9780735405066",
series = "AIP Conference Proceedings",
pages = "3--8",
booktitle = "Water Dynamics - 5th International Workshop on Water Dynamics",
note = "5th International Workshop on Water Dynamics ; Conference date: 25-09-2007 Through 27-09-2007",
}