Abstract
The photoluminescence characteristics of GaInNAs quantum wells (QWs) after high temperature annealing were discussed. The QWs were grown using radio-freqency nitorgen plasma source. It was found that annealing at 840°C for 10 min improved the GaInNAs QW quality. The results were supported by evidence from PL and XRD measurements. It was suggested that residual strain-induced GaAs/GaInAs/GaAs interface diffusion and defect-assisted diffusion are the mechanisms responsible for blueshift of photoluminescence peak wavelength in GaInAs QWs.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 964-968 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 20 |
| Issue number | 3 |
| DOIs | |
| State | Published - May 2002 |
| Externally published | Yes |
| Event | 20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States Duration: Oct 1 2001 → Oct 3 2001 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering