Photoluminescence characterization of GaInNAs/GaAs quantum well carrier dynamics

T. K. Ng*, S. F. Yoon, S. Z. Wang, L. H. Lin, Y. Ochiai, T. Matsusue

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


The significance of variable temperature photoluminescence (PL) measurement of GaInAs/GaAs quantum well for understanding carrier dynamics was discussed. Two Gaussian functions were applied for deducing the energy separation between localized and e1 states by fitting the PL spectra. A faster rate of energy redshift was obtained for the main localized state.

Original languageEnglish (US)
Pages (from-to)3110-3114
Number of pages5
JournalJournal of Applied Physics
Issue number5
StatePublished - Sep 1 2003
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy


Dive into the research topics of 'Photoluminescence characterization of GaInNAs/GaAs quantum well carrier dynamics'. Together they form a unique fingerprint.

Cite this