Photoluminescence of polycrystalline CuIn 0.5 Ga 0.5 Te 2 thin films grown by flash evaporation

L. Yandjah, L. Bechiri, M. Benabdeslem, N. Benslim, A. Amara, X. Portier, M. Bououdina, Ahmed Ziani

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Polycrystalline CuIn0.5Ga0.5Te2 films were deposited by flash evaporation from ingot prepared by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te elements in vacuum sealed quartz . The as-obtained films were characterized by X – ray diffraction (XRD), transmission electron microscopy (TEM) combined with energy dispersive spectroscopy (EDS). XRD and TEM results showed that the layer has a chalcopyrite-type structure, predominantly oriented along (112) planes, with lattice parameters a = 0.61 nm and c = 1.22 nm. The optical properties in the near - infrared and visible range 600 - 2400 nm have been studied. The analysis of absorption coefficient yielded an energy gap value of 1.27 eV. Photoluminescence analysis of as-grown sample shows two main emission peaks located at 0.87 and 1.19 eV at 4 K.
Original languageEnglish (US)
Pages (from-to)904-910
Number of pages7
JournalChinese Journal of Physics
Volume56
Issue number3
DOIs
StatePublished - Apr 3 2018

Fingerprint

Dive into the research topics of 'Photoluminescence of polycrystalline CuIn 0.5 Ga 0.5 Te 2 thin films grown by flash evaporation'. Together they form a unique fingerprint.

Cite this