Photoluminescence studies of SiC nanocrystals embedded in a SiO2 matrix

Y. P. Guo; J. C. Zheng; A. T.S. Wee; C. H.A. Huan; K. Li; J. S. Pan; Z. C. Feng; S. J. Chua

doi:10.1016/S0009-2614(01)00308-6

Photoluminescence studies of SiC nanocrystals embedded in a SiO₂ matrix

Y. P. Guo^*, J. C. Zheng, A. T.S. Wee, C. H.A. Huan, K. Li, J. S. Pan, Z. C. Feng, S. J. Chua

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

74 Scopus citations

Abstract

The dependence of the photoluminescence (PL) from SiC nanocrystals embedded in a SiO₂ matrix on annealing is presented. Blue-green PL has been observed at room temperature from annealed SiC-SiO₂ composite films. The intensity of the single emission band at 460 nm (2.7 eV) shows a strong dependence on the annealing temperature. The combination of high-resolution transmission electron microscopy (HRTEM), Fourier transform infrared (FTIR) transmission spectra and PL results suggest that SiC nanocrystals have been incorporated into the SiO₂ matrix and O-deficient defects were formed. The origin of luminescence is attributed to the creation of defects in silicon oxide.

Original language	English (US)
Pages (from-to)	319-322
Number of pages	4
Journal	Chemical Physics Letters
Volume	339
Issue number	5-6
DOIs	https://doi.org/10.1016/S0009-2614(01)00308-6
State	Published - May 18 2001
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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@article{317a2021895444daa196400b7b5ac4ff,

title = "Photoluminescence studies of SiC nanocrystals embedded in a SiO2 matrix",

abstract = "The dependence of the photoluminescence (PL) from SiC nanocrystals embedded in a SiO2 matrix on annealing is presented. Blue-green PL has been observed at room temperature from annealed SiC-SiO2 composite films. The intensity of the single emission band at 460 nm (2.7 eV) shows a strong dependence on the annealing temperature. The combination of high-resolution transmission electron microscopy (HRTEM), Fourier transform infrared (FTIR) transmission spectra and PL results suggest that SiC nanocrystals have been incorporated into the SiO2 matrix and O-deficient defects were formed. The origin of luminescence is attributed to the creation of defects in silicon oxide.",

author = "Guo, {Y. P.} and Zheng, {J. C.} and Wee, {A. T.S.} and Huan, {C. H.A.} and K. Li and Pan, {J. S.} and Feng, {Z. C.} and Chua, {S. J.}",

year = "2001",

month = may,

day = "18",

doi = "10.1016/S0009-2614(01)00308-6",

language = "English (US)",

volume = "339",

pages = "319--322",

journal = "Chemical Physics Letters",

issn = "0009-2614",

publisher = "Elsevier",

number = "5-6",

}

TY - JOUR

T1 - Photoluminescence studies of SiC nanocrystals embedded in a SiO2 matrix

AU - Guo, Y. P.

AU - Zheng, J. C.

AU - Wee, A. T.S.

AU - Huan, C. H.A.

AU - Li, K.

AU - Pan, J. S.

AU - Feng, Z. C.

AU - Chua, S. J.

PY - 2001/5/18

Y1 - 2001/5/18

N2 - The dependence of the photoluminescence (PL) from SiC nanocrystals embedded in a SiO2 matrix on annealing is presented. Blue-green PL has been observed at room temperature from annealed SiC-SiO2 composite films. The intensity of the single emission band at 460 nm (2.7 eV) shows a strong dependence on the annealing temperature. The combination of high-resolution transmission electron microscopy (HRTEM), Fourier transform infrared (FTIR) transmission spectra and PL results suggest that SiC nanocrystals have been incorporated into the SiO2 matrix and O-deficient defects were formed. The origin of luminescence is attributed to the creation of defects in silicon oxide.

AB - The dependence of the photoluminescence (PL) from SiC nanocrystals embedded in a SiO2 matrix on annealing is presented. Blue-green PL has been observed at room temperature from annealed SiC-SiO2 composite films. The intensity of the single emission band at 460 nm (2.7 eV) shows a strong dependence on the annealing temperature. The combination of high-resolution transmission electron microscopy (HRTEM), Fourier transform infrared (FTIR) transmission spectra and PL results suggest that SiC nanocrystals have been incorporated into the SiO2 matrix and O-deficient defects were formed. The origin of luminescence is attributed to the creation of defects in silicon oxide.

UR - http://www.scopus.com/inward/record.url?scp=0001013498&partnerID=8YFLogxK

U2 - 10.1016/S0009-2614(01)00308-6

DO - 10.1016/S0009-2614(01)00308-6

M3 - Article

AN - SCOPUS:0001013498

SN - 0009-2614

VL - 339

SP - 319

EP - 322

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 5-6

ER -

Photoluminescence studies of SiC nanocrystals embedded in a SiO₂ matrix

Abstract

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