@inproceedings{7be1c2e28bd349e9bb6d9f0f430802e8,
title = "Photonic integration of InGaAs-InGaAsP laser using low energy arsenic implantation induced disordering for quantum well intermixing",
abstract = "Quantum well intermixing (QWI) using a neutral impurity induced disordering technique is of great interest in producing photonic integrated circuits (PICs) [ 1,2]. In this paper, we report a high selectivity QWI process using a low energy arsenic implantation induced disordering technique. Since it is known that fiee electrons fiom impurities result in high optical absorption and degrade the quality of the material after intermixing [2], arsenic, an electrically neutral species in the InGaAs/InGaAsP system, was chosen for the process development. It is noted that arsenic as a neutral impurity is not widely studied in the InGaAs-InGaAsP systems. The relatively low implantation energy, 360keV, reduces the damage generation and results in a shallow implantation depth far away fiom the active region.",
author = "Lim, {H. S.} and Ooi, {B. S.} and Lam, {Y. L.} and Chan, {Y. C.} and V. Aimez and J. Beauvais and J. Beerens",
note = "Publisher Copyright: {\textcopyright} 1999 IEEE.; 1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999 ; Conference date: 30-08-1999 Through 03-09-1999",
year = "1999",
doi = "10.1109/CLEOPR.1999.817956",
language = "English (US)",
series = "CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1030--1031",
booktitle = "CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics",
address = "United States",
}