Planar heterojunction perovskite solar cell based on CdS electron transport layer

Mutalifu Abulikemu; Jeremy Barbe; Abdulrahman El Labban; Jessica Eid; Silvano Del Gobbo

doi:10.1016/j.tsf.2017.07.003

Planar heterojunction perovskite solar cell based on CdS electron transport layer

Mutalifu Abulikemu, Jeremy Barbe, Abdulrahman El Labban, Jessica Eid, Silvano Del Gobbo

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

We report on planar heterojunction perovskite solar cells employing a metal chalcogenide (CdS) electron transport layer with power conversion efficiency up to 10.8%. The CdS layer was deposited via solution-process chemical bath deposition at low-temperature (60°C). Pinhole-free and uniform thin films were obtained with good structural, optical and morphological properties. An optimal layer thickness of 60nm yielded an improved open-circuit voltage and fill factor compared to the standard TiO2-based solar cells. Devices showed a higher reproducibility of the results compared to TiO2-based ones. We also tested the effect of annealing temperature on the CdS film and the effect of CdCl2 treatment followed by high temperature annealing (410°C) that is expected to passivate the surface, thus eliminating eventual trap-states inducing recombination.

Original language	English (US)
Pages (from-to)	512-518
Number of pages	7
Journal	Thin Solid Films
Volume	636
DOIs	https://doi.org/10.1016/j.tsf.2017.07.003
State	Published - Jul 2 2017

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10.1016/j.tsf.2017.07.003

https://repository.kaust.edu.sa/bitstream/10754/625149/1/1-s2.0-S0040609017304972-main.pdf

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title = "Planar heterojunction perovskite solar cell based on CdS electron transport layer",

abstract = "We report on planar heterojunction perovskite solar cells employing a metal chalcogenide (CdS) electron transport layer with power conversion efficiency up to 10.8%. The CdS layer was deposited via solution-process chemical bath deposition at low-temperature (60°C). Pinhole-free and uniform thin films were obtained with good structural, optical and morphological properties. An optimal layer thickness of 60nm yielded an improved open-circuit voltage and fill factor compared to the standard TiO2-based solar cells. Devices showed a higher reproducibility of the results compared to TiO2-based ones. We also tested the effect of annealing temperature on the CdS film and the effect of CdCl2 treatment followed by high temperature annealing (410°C) that is expected to passivate the surface, thus eliminating eventual trap-states inducing recombination.",

author = "Mutalifu Abulikemu and Jeremy Barbe and {El Labban}, Abdulrahman and Jessica Eid and {Del Gobbo}, Silvano",

note = "KAUST Repository Item: Exported on 2020-10-01",

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doi = "10.1016/j.tsf.2017.07.003",

language = "English (US)",

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T1 - Planar heterojunction perovskite solar cell based on CdS electron transport layer

AU - Abulikemu, Mutalifu

AU - Barbe, Jeremy

AU - El Labban, Abdulrahman

AU - Eid, Jessica

AU - Del Gobbo, Silvano

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2017/7/2

Y1 - 2017/7/2

N2 - We report on planar heterojunction perovskite solar cells employing a metal chalcogenide (CdS) electron transport layer with power conversion efficiency up to 10.8%. The CdS layer was deposited via solution-process chemical bath deposition at low-temperature (60°C). Pinhole-free and uniform thin films were obtained with good structural, optical and morphological properties. An optimal layer thickness of 60nm yielded an improved open-circuit voltage and fill factor compared to the standard TiO2-based solar cells. Devices showed a higher reproducibility of the results compared to TiO2-based ones. We also tested the effect of annealing temperature on the CdS film and the effect of CdCl2 treatment followed by high temperature annealing (410°C) that is expected to passivate the surface, thus eliminating eventual trap-states inducing recombination.

AB - We report on planar heterojunction perovskite solar cells employing a metal chalcogenide (CdS) electron transport layer with power conversion efficiency up to 10.8%. The CdS layer was deposited via solution-process chemical bath deposition at low-temperature (60°C). Pinhole-free and uniform thin films were obtained with good structural, optical and morphological properties. An optimal layer thickness of 60nm yielded an improved open-circuit voltage and fill factor compared to the standard TiO2-based solar cells. Devices showed a higher reproducibility of the results compared to TiO2-based ones. We also tested the effect of annealing temperature on the CdS film and the effect of CdCl2 treatment followed by high temperature annealing (410°C) that is expected to passivate the surface, thus eliminating eventual trap-states inducing recombination.

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UR - http://www.sciencedirect.com/science/article/pii/S0040609017304972

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U2 - 10.1016/j.tsf.2017.07.003

DO - 10.1016/j.tsf.2017.07.003

M3 - Article

SN - 0040-6090

VL - 636

SP - 512

EP - 518

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Planar heterojunction perovskite solar cell based on CdS electron transport layer

Abstract

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