A quantum well intermixing process for the fabrication of polarization insensitive electro-absorption intensity modulators on an InGaAs/InGaAsP heterostructure was reported. The heterostructure used in this study was a lattice-matched InGaAs/InGaAsP multiple quantum well (MQW) laser structure operating at 1.55 μm. Results showed that a modulation depth of ∼7 dB and 16 dB could be achieved for the intermixed and as-grown modulators.
|Original language||English (US)|
|Number of pages||2|
|State||Published - Feb 28 2002|
ASJC Scopus subject areas
- Electrical and Electronic Engineering