Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition

Long Yan, Yuantao Zhang, Xu Han, Gaoqiang Deng, Pengchong Li, Ye Yu, Liang Chen, Xiaohang Li, Junfeng Song

Research output: Contribution to journalArticlepeer-review

32 Scopus citations


Polarization-induced doping has been shown to be effective for wide-bandgap III-nitrides. In this work, we demonstrated a significantly enhanced hole concentration via linearly grading an N-polar AlxGa1-xN (x = 0–0.3) layer grown by metal-organic chemical vapor deposition. The hole concentration increased by ∼17 times compared to that of N-polar p-GaN at 300 K. The fitting results of temperature-dependent hole concentration indicated that the holes in the graded p-AlGaN layer comprised both polarization-induced and thermally activated ones. By optimizing the growth conditions, the hole concentration was further increased to 9.0 × 1017 cm−3 in the graded AlGaN layer. The N-polar blue-violet light-emitting device with the graded p-AlGaN shows stronger electroluminescence than the one with the conventional p-GaN. The study indicates the potential of the polarization doping technique in high-performance N-polar light-emitting devices.
Original languageEnglish (US)
Pages (from-to)182104
JournalApplied Physics Letters
Issue number18
StatePublished - May 3 2018


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