Poly (3, 3''' -didodecylquarterthiophene) field effect transistors with single-walled carbon nanotube based source and drain electrodes

Yuan Yuan Zhang; Yumeng Shi; Fuming Chen; S. G. Mhaisalkar; Lain Jong Li; Beng S. Ong; Yiliang Wu

doi:10.1063/1.2806234

Poly (3, 3''' -didodecylquarterthiophene) field effect transistors with single-walled carbon nanotube based source and drain electrodes

Yuan Yuan Zhang^*, Yumeng Shi, Fuming Chen, S. G. Mhaisalkar, Lain Jong Li, Beng S. Ong, Yiliang Wu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

A solution processable method for employing single-walled carbon nanotubes (SWCNTs) as bottom contact source/drain electrodes for a significant reduction of contact resistance in poly (3, 3 -didodecylquarterthiophene) based organic field effect transistors (OFETs) is proposed. A two order of magnitude reduction in contact resistance and up to a threefold improvement in field effect mobilities were observed in SWCNT contacted OFETs as opposed to similar devices with gold source/drain electrodes. Based on Kelvin probe measurements, this improvement was attributed to a reduction in the Schottky barrier for hole injection into organic semiconductor.

Original language	English (US)
Article number	223512
Journal	Applied Physics Letters
Volume	91
Issue number	22
DOIs	https://doi.org/10.1063/1.2806234
State	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Poly (3, 3''' -didodecylquarterthiophene) field effect transistors with single-walled carbon nanotube based source and drain electrodes",

abstract = "A solution processable method for employing single-walled carbon nanotubes (SWCNTs) as bottom contact source/drain electrodes for a significant reduction of contact resistance in poly (3, 3 -didodecylquarterthiophene) based organic field effect transistors (OFETs) is proposed. A two order of magnitude reduction in contact resistance and up to a threefold improvement in field effect mobilities were observed in SWCNT contacted OFETs as opposed to similar devices with gold source/drain electrodes. Based on Kelvin probe measurements, this improvement was attributed to a reduction in the Schottky barrier for hole injection into organic semiconductor.",

author = "Zhang, {Yuan Yuan} and Yumeng Shi and Fuming Chen and Mhaisalkar, {S. G.} and Li, {Lain Jong} and Ong, {Beng S.} and Yiliang Wu",

year = "2007",

doi = "10.1063/1.2806234",

language = "English (US)",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

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T1 - Poly (3, 3''' -didodecylquarterthiophene) field effect transistors with single-walled carbon nanotube based source and drain electrodes

AU - Zhang, Yuan Yuan

AU - Shi, Yumeng

AU - Chen, Fuming

AU - Mhaisalkar, S. G.

AU - Li, Lain Jong

AU - Ong, Beng S.

AU - Wu, Yiliang

PY - 2007

Y1 - 2007

N2 - A solution processable method for employing single-walled carbon nanotubes (SWCNTs) as bottom contact source/drain electrodes for a significant reduction of contact resistance in poly (3, 3 -didodecylquarterthiophene) based organic field effect transistors (OFETs) is proposed. A two order of magnitude reduction in contact resistance and up to a threefold improvement in field effect mobilities were observed in SWCNT contacted OFETs as opposed to similar devices with gold source/drain electrodes. Based on Kelvin probe measurements, this improvement was attributed to a reduction in the Schottky barrier for hole injection into organic semiconductor.

AB - A solution processable method for employing single-walled carbon nanotubes (SWCNTs) as bottom contact source/drain electrodes for a significant reduction of contact resistance in poly (3, 3 -didodecylquarterthiophene) based organic field effect transistors (OFETs) is proposed. A two order of magnitude reduction in contact resistance and up to a threefold improvement in field effect mobilities were observed in SWCNT contacted OFETs as opposed to similar devices with gold source/drain electrodes. Based on Kelvin probe measurements, this improvement was attributed to a reduction in the Schottky barrier for hole injection into organic semiconductor.

UR - http://www.scopus.com/inward/record.url?scp=36549034213&partnerID=8YFLogxK

U2 - 10.1063/1.2806234

DO - 10.1063/1.2806234

M3 - Article

AN - SCOPUS:36549034213

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 223512

ER -

Poly (3, 3''' -didodecylquarterthiophene) field effect transistors with single-walled carbon nanotube based source and drain electrodes

Abstract

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