TY - JOUR
T1 - Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics
AU - Lanza, Mario
AU - Iglesias, Vanessa
AU - Porti, Marc
AU - Nafria, Montse
AU - Aymerich, Xavier
N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16
PY - 2011/1/1
Y1 - 2011/1/1
N2 - In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al2O3 layers have been also analyzed. © 2011 Lanza et al.
AB - In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al2O3 layers have been also analyzed. © 2011 Lanza et al.
UR - https://nanoscalereslett.springeropen.com/articles/10.1186/1556-276X-6-108
UR - http://www.scopus.com/inward/record.url?scp=84255173397&partnerID=8YFLogxK
U2 - 10.1186/1556-276X-6-108
DO - 10.1186/1556-276X-6-108
M3 - Article
SN - 1556-276X
VL - 6
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
IS - 1
ER -