Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

Y. Zhang; W. B. Mi; Xixiang Zhang

doi:10.1209/0295-5075/114/67003

Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

Y. Zhang, W. B. Mi, Xixiang Zhang

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Abstract

Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.

Original language	English (US)
Pages (from-to)	67003
Journal	EPL (Europhysics Letters)
Volume	114
Issue number	6
DOIs	https://doi.org/10.1209/0295-5075/114/67003
State	Published - Jul 20 2016

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title = "Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure",

abstract = "Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. {\textcopyright} CopyrightEPLA, 2016.",

author = "Y. Zhang and Mi, {W. B.} and Xixiang Zhang",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: 51171126, NSFC",

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T1 - Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

AU - Zhang, Y.

AU - Mi, W. B.

AU - Zhang, Xixiang

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: 51171126, NSFC

PY - 2016/7/20

Y1 - 2016/7/20

N2 - Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.

AB - Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.

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UR - https://iopscience.iop.org/article/10.1209/0295-5075/114/67003

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U2 - 10.1209/0295-5075/114/67003

DO - 10.1209/0295-5075/114/67003

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SP - 67003

JO - EPL (Europhysics Letters)

JF - EPL (Europhysics Letters)

IS - 6

ER -

Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

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