Positive Tone Nanoparticle Photoresists: New Insight on the Patterning Mechanism

Mufei Yu, Hong Xu, Vasiliki Kosma, Jeremy Odent, Kazuki Kasahara, Emmanuel Giannelis, Christopher Ober

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Methacrylate based nanoparticle materials have been investigated for their negative-tone patterning with DUV (248nm, 254nm), e-beam and EUV lithography, and show promising EUV sensitivity and resolution. In order to further extend the application of this novel class of materials and understand more about the underlying mechanism, we continue to study its dual-tone behavior and the tone-switching process. Catalyzed by a photoradical generator, we have been able to print positive tone line-space patterns with both DUV and e-beam exposure enabled patterning of features with a wide range of line-widths. By monitoring the patterning process, the PEB conditions have been found to be a crucial factor, which determines the solubility and core-ligand interactions.
Original languageEnglish (US)
Pages (from-to)509-512
Number of pages4
JournalJournal of Photopolymer Science and Technology
Volume29
Issue number3
DOIs
StatePublished - 2016
Externally publishedYes

ASJC Scopus subject areas

  • Materials Chemistry
  • Polymers and Plastics

Fingerprint

Dive into the research topics of 'Positive Tone Nanoparticle Photoresists: New Insight on the Patterning Mechanism'. Together they form a unique fingerprint.

Cite this