TY - JOUR
T1 - Post-CMOS FinFET integration of bismuth telluride and antimony telluride thin-film-based thermoelectric devices on SoI substrate
AU - Aktakka, Ethem Erkan
AU - Ghafouri, Niloufar
AU - Smith, Casey
AU - Peterson, Rebecca Lorenz
AU - Hussain, Muhammad Mustafa
AU - Najafi, Khalil
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by King Abdullah University of Science and Technology through an Academic Excellence Alliance Global Collaborative Research Grant. The review of this letter was arranged by Editor J. Cai.
PY - 2013/10
Y1 - 2013/10
N2 - This letter reports, for the first time, heterogeneous integration of bismuth telluride (Bi2Te3) and antimony telluride (Sb 2Te3) thin-film-based thermoelectric ffect transistors) via a characterized TE-film coevaporationand shadow-mask patterning process using predeposition surface treatment methods for reduced TE-metal contact resistance. As a demonstration vehicle, a 2 × 2 mm2-sized integrated planar thermoelectric generator (TEG) is shown to harvest 0.7 μ W from 21-K temperature gradient. Transistor performance showed no significant change upon post-CMOS TEG integration, indicating, for the first time, the CMOS compatibility of the Bi2Te3 and Sb2Te3 thin films, which could be leveraged for realization of high-performance integrated micro-TE harvesters and coolers. © 2013 IEEE.
AB - This letter reports, for the first time, heterogeneous integration of bismuth telluride (Bi2Te3) and antimony telluride (Sb 2Te3) thin-film-based thermoelectric ffect transistors) via a characterized TE-film coevaporationand shadow-mask patterning process using predeposition surface treatment methods for reduced TE-metal contact resistance. As a demonstration vehicle, a 2 × 2 mm2-sized integrated planar thermoelectric generator (TEG) is shown to harvest 0.7 μ W from 21-K temperature gradient. Transistor performance showed no significant change upon post-CMOS TEG integration, indicating, for the first time, the CMOS compatibility of the Bi2Te3 and Sb2Te3 thin films, which could be leveraged for realization of high-performance integrated micro-TE harvesters and coolers. © 2013 IEEE.
UR - http://hdl.handle.net/10754/563020
UR - http://ieeexplore.ieee.org/document/6589104/
UR - http://www.scopus.com/inward/record.url?scp=84884742797&partnerID=8YFLogxK
U2 - 10.1109/LED.2013.2277693
DO - 10.1109/LED.2013.2277693
M3 - Article
SN - 0741-3106
VL - 34
SP - 1334
EP - 1336
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 10
ER -