Postgrowth band gap trimming of InAs/InAlGaAs quantum-dash laser

H. S. Djie; Y. Wang; D. Negro; B. S. Ooi

doi:10.1063/1.2431707

Postgrowth band gap trimming of InAs/InAlGaAs quantum-dash laser

H. S. Djie^*, Y. Wang, D. Negro, B. S. Ooi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The authors demonstrate the selective postgrowth band gap engineering and the fabrication of band gap tuned laser in InAs-InAlGaAs quantum-dash lasers grown on InP substrate. The process utilizes nitrogen implantation to induce local defects and to enhance the group-III intermixing rate spatially upon the thermal annealing. Compared with the as-grown laser, intermixed laser with wavelength shifted by 127 nm shows a 36% reduction in threshold current density and produces a comparable slope of efficiency. The integrity of the intermixed material is retained suggesting that intermixing process paves way to planar, monolithic integration of quantum-dash-based devices.

Original language	English (US)
Article number	031101
Journal	Applied Physics Letters
Volume	90
Issue number	3
DOIs	https://doi.org/10.1063/1.2431707
State	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Postgrowth band gap trimming of InAs/InAlGaAs quantum-dash laser",

abstract = "The authors demonstrate the selective postgrowth band gap engineering and the fabrication of band gap tuned laser in InAs-InAlGaAs quantum-dash lasers grown on InP substrate. The process utilizes nitrogen implantation to induce local defects and to enhance the group-III intermixing rate spatially upon the thermal annealing. Compared with the as-grown laser, intermixed laser with wavelength shifted by 127 nm shows a 36% reduction in threshold current density and produces a comparable slope of efficiency. The integrity of the intermixed material is retained suggesting that intermixing process paves way to planar, monolithic integration of quantum-dash-based devices.",

author = "Djie, {H. S.} and Y. Wang and D. Negro and Ooi, {B. S.}",

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AU - Djie, H. S.

AU - Wang, Y.

AU - Negro, D.

AU - Ooi, B. S.

PY - 2007

Y1 - 2007

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AB - The authors demonstrate the selective postgrowth band gap engineering and the fabrication of band gap tuned laser in InAs-InAlGaAs quantum-dash lasers grown on InP substrate. The process utilizes nitrogen implantation to induce local defects and to enhance the group-III intermixing rate spatially upon the thermal annealing. Compared with the as-grown laser, intermixed laser with wavelength shifted by 127 nm shows a 36% reduction in threshold current density and produces a comparable slope of efficiency. The integrity of the intermixed material is retained suggesting that intermixing process paves way to planar, monolithic integration of quantum-dash-based devices.

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Postgrowth band gap trimming of InAs/InAlGaAs quantum-dash laser

Abstract

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