Postgrowth wavelength engineering of InAs/InAlGaAs/InP quantum-dash-in-well lasers

Hery S. Djie*, Yang Wang, Boon S. Ooi, Dong Ning Wang, James C.M. Hwang, Ying Wu, Xiao Ming Fang, Joel Fastenau, Amy W.K. Liu, Gerard T. Dang, Wayne H. Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


Authors report the demonstration of the emission wavelength tuning of InAs quantum-dashes within InAlGaAs quantum-wells grown on InP substrate, that gives the initial wavelength emission at ∼1.65 μm. The impurity-free dielectric cap annealing and the nitrogen ion-implantation induced intermixing techniques have been implemented to spatially control the group-III intermixing in the structure, which produces differential bandgap shift of 80 nm and 112 nm, respectively. Transmission electron microscopy, optical and electrical characterizations have been performed to evaluate the quality of the intermixed QD material and bandgap tuned devices. Compared to the control (non-intermixed) lasers, the light-current characteristics for the over 125 nm wavelength shifted QD lasers are not significantly changed suggesting that the quality of the intermixed material is well-preserved. The intermixed lasers exhibit the narrow linewidth as compared to the as-grown due to the improved QD homogeneity. The integrity of the QD material is retained after intermixing suggesting the potential application for the planar integration of multiple active/passive QD-based devices on a single InP chip.

Original languageEnglish (US)
Title of host publicationOptoelectronic Integrated Circuits IX
StatePublished - 2007
Externally publishedYes
EventOptoelectronic Integrated Circuits IX - San Jose, CA, United States
Duration: Jan 22 2007Jan 24 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherOptoelectronic Integrated Circuits IX
Country/TerritoryUnited States
CitySan Jose, CA


  • Annealing
  • Bandgap tuned laser
  • Dash-in-well
  • Disordering
  • InAs/InAlGaAs
  • InAs/InP
  • Interdiffusion
  • Ion implantation
  • Photonic integrated circuits
  • Quantum-dash
  • Quantum-dot intermixing
  • Quantum-dots
  • Quantum-well intermixing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Postgrowth wavelength engineering of InAs/InAlGaAs/InP quantum-dash-in-well lasers'. Together they form a unique fingerprint.

Cite this