Power-dependent photoluminescence in strained InxGa1−xN/GaN multiple-quantum wells: Simulations of alloying and interface-specific effects

Nacir Tit; Pawan Mishra; Tien Khee Ng; Boon S. Ooi

doi:10.1109/ICREGA.2018.8337637

Power-dependent photoluminescence in strained InxGa1−xN/GaN multiple-quantum wells: Simulations of alloying and interface-specific effects

Nacir Tit, Pawan Mishra, Tien Khee Ng, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Combined experimental and theoretical efforts are focused to study hexagonal InGaN/GaN[0001] multiple-quantum wells (MQWs). Plasma-assisted molecular-beam epitaxy (PA-MBE) is used to grow high-quality MQWs with multiplicity of 1, 3 and 5. Characterizations methods based on scanning tunneling electron microscopy (STEM) and photoluminescence (PL) indicated that each period is composed of 10 nm GaN barrier and 2.5 nm InGaN well with x ≤ 0.12. Usually, these MQWs have radiations with the blue region. However, in power (from 0.008 mW to 8 mW) dependent micro-photoluminescence (PL), measured at room temperature, blue shifts of about 11.11 nm, 11.94 nm and 14.94 nm were observed corresponding to the single-quantum well (1-QW), 3-MQW, and 5-MQW, respectively. While in literature such shift is speculated to be attributed to so-called

Original language	English (US)
Title of host publication	2018 5th International Conference on Renewable Energy: Generation and Applications (ICREGA)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	117-123
Number of pages	7
ISBN (Print)	9781538622513
DOIs	https://doi.org/10.1109/ICREGA.2018.8337637
State	Published - Apr 18 2018

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10.1109/ICREGA.2018.8337637

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Tit, N., Mishra, P., Ng, T. K., & Ooi, B. S. (2018). Power-dependent photoluminescence in strained InxGa1−xN/GaN multiple-quantum wells: Simulations of alloying and interface-specific effects. In 2018 5th International Conference on Renewable Energy: Generation and Applications (ICREGA) (pp. 117-123). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ICREGA.2018.8337637

@inproceedings{bbab8e40b92249cb91e06bb7e2ba4124,

title = "Power-dependent photoluminescence in strained InxGa1−xN/GaN multiple-quantum wells: Simulations of alloying and interface-specific effects",

abstract = "Combined experimental and theoretical efforts are focused to study hexagonal InGaN/GaN[0001] multiple-quantum wells (MQWs). Plasma-assisted molecular-beam epitaxy (PA-MBE) is used to grow high-quality MQWs with multiplicity of 1, 3 and 5. Characterizations methods based on scanning tunneling electron microscopy (STEM) and photoluminescence (PL) indicated that each period is composed of 10 nm GaN barrier and 2.5 nm InGaN well with x ≤ 0.12. Usually, these MQWs have radiations with the blue region. However, in power (from 0.008 mW to 8 mW) dependent micro-photoluminescence (PL), measured at room temperature, blue shifts of about 11.11 nm, 11.94 nm and 14.94 nm were observed corresponding to the single-quantum well (1-QW), 3-MQW, and 5-MQW, respectively. While in literature such shift is speculated to be attributed to so-called",

author = "Nacir Tit and Pawan Mishra and Ng, {Tien Khee} and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2020-04-23 Acknowledgements: One of the authors (N.T.) is indebted to thank the financial support of the UAEU (Grants no.31R068 and 31R145).",

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doi = "10.1109/ICREGA.2018.8337637",

language = "English (US)",

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Tit, N, Mishra, P, Ng, TK & Ooi, BS 2018, Power-dependent photoluminescence in strained InxGa1−xN/GaN multiple-quantum wells: Simulations of alloying and interface-specific effects. in 2018 5th International Conference on Renewable Energy: Generation and Applications (ICREGA). Institute of Electrical and Electronics Engineers (IEEE), pp. 117-123. https://doi.org/10.1109/ICREGA.2018.8337637

Power-dependent photoluminescence in strained InxGa1−xN/GaN multiple-quantum wells: Simulations of alloying and interface-specific effects. / Tit, Nacir; Mishra, Pawan; Ng, Tien Khee et al.
2018 5th International Conference on Renewable Energy: Generation and Applications (ICREGA). Institute of Electrical and Electronics Engineers (IEEE), 2018. p. 117-123.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-04-23 Acknowledgements: One of the authors (N.T.) is indebted to thank the financial support of the UAEU (Grants no.31R068 and 31R145).

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N2 - Combined experimental and theoretical efforts are focused to study hexagonal InGaN/GaN[0001] multiple-quantum wells (MQWs). Plasma-assisted molecular-beam epitaxy (PA-MBE) is used to grow high-quality MQWs with multiplicity of 1, 3 and 5. Characterizations methods based on scanning tunneling electron microscopy (STEM) and photoluminescence (PL) indicated that each period is composed of 10 nm GaN barrier and 2.5 nm InGaN well with x ≤ 0.12. Usually, these MQWs have radiations with the blue region. However, in power (from 0.008 mW to 8 mW) dependent micro-photoluminescence (PL), measured at room temperature, blue shifts of about 11.11 nm, 11.94 nm and 14.94 nm were observed corresponding to the single-quantum well (1-QW), 3-MQW, and 5-MQW, respectively. While in literature such shift is speculated to be attributed to so-called

AB - Combined experimental and theoretical efforts are focused to study hexagonal InGaN/GaN[0001] multiple-quantum wells (MQWs). Plasma-assisted molecular-beam epitaxy (PA-MBE) is used to grow high-quality MQWs with multiplicity of 1, 3 and 5. Characterizations methods based on scanning tunneling electron microscopy (STEM) and photoluminescence (PL) indicated that each period is composed of 10 nm GaN barrier and 2.5 nm InGaN well with x ≤ 0.12. Usually, these MQWs have radiations with the blue region. However, in power (from 0.008 mW to 8 mW) dependent micro-photoluminescence (PL), measured at room temperature, blue shifts of about 11.11 nm, 11.94 nm and 14.94 nm were observed corresponding to the single-quantum well (1-QW), 3-MQW, and 5-MQW, respectively. While in literature such shift is speculated to be attributed to so-called

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BT - 2018 5th International Conference on Renewable Energy: Generation and Applications (ICREGA)

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Tit N, Mishra P, Ng TK, Ooi BS. Power-dependent photoluminescence in strained InxGa1−xN/GaN multiple-quantum wells: Simulations of alloying and interface-specific effects. In 2018 5th International Conference on Renewable Energy: Generation and Applications (ICREGA). Institute of Electrical and Electronics Engineers (IEEE). 2018. p. 117-123 doi: 10.1109/ICREGA.2018.8337637

Power-dependent photoluminescence in strained InxGa1−xN/GaN multiple-quantum wells: Simulations of alloying and interface-specific effects

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