Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2Heterostructure

Tribhuwan Pandey, Avinash P. Nayak, Jin Liu, Samuel T. Moran, Joon-Seok Kim, Lain-Jong Li, Jung-Fu Lin, Deji Akinwande, Abhishek K. Singh

Research output: Contribution to journalArticlepeer-review

46 Scopus citations


A unique way of achieving controllable, pressure-induced charge transfer doping in the graphene/MoS2 heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa(-1) as a function of applied hydrostatic pressure, leading to heavy p-type doping in graphene. The doping was confirmed by I2D /IG measurements.
Original languageEnglish (US)
Pages (from-to)4063-4069
Number of pages7
Issue number30
StatePublished - Jun 20 2016


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