Printed Graphene Electrode for ITO/MoS2/Graphene Photodiode Application

Amal AlAmri; Tien Khee Ng; Nour El I Boukortt; Boon S. Ooi

doi:10.3390/coatings13050831

Printed Graphene Electrode for ITO/MoS2/Graphene Photodiode Application

Amal AlAmri, Tien Khee Ng, Nour El I Boukortt, Boon S. Ooi

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Lightweight and flexible electronics have recently emerged at the forefront of optoelectronic applications. In this regard, graphene electrodes enable opportunities for new photodiode devices. In this paper, we formulated and tested graphene ink using the standard inkjet printing technique. It was shown that the maximum conductivity of ink was achieved for 14 print passes of the graphene layer. Moreover, we deposited Molybdenum Disulfide (MoS2) ink in the same pattern and used it as an active layer. We put MoS2 ink on an Indium-Tin-Oxide (ITO) glass substrate and then deposited graphene ink as a top electrode to fabricate an ITO/MoS2/graphene device. The fabricated device showed good rectification behavior and high ON/OFF switching behavior with a max photocurrent of 15 µA at +2 V. The technique thus paves the way for low-cost, low-temperature processing of electronics and one-step fabrication.

Original language	English (US)
Pages (from-to)	831
Journal	Coatings
Volume	13
Issue number	5
DOIs	https://doi.org/10.3390/coatings13050831
State	Published - Apr 26 2023

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https://repository.kaust.edu.sa/bitstream/10754/691367/1/coatings-13-00831.pdf

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@article{c3fd456427a140528f6f942a5272b0f0,

title = "Printed Graphene Electrode for ITO/MoS2/Graphene Photodiode Application",

abstract = "Lightweight and flexible electronics have recently emerged at the forefront of optoelectronic applications. In this regard, graphene electrodes enable opportunities for new photodiode devices. In this paper, we formulated and tested graphene ink using the standard inkjet printing technique. It was shown that the maximum conductivity of ink was achieved for 14 print passes of the graphene layer. Moreover, we deposited Molybdenum Disulfide (MoS2) ink in the same pattern and used it as an active layer. We put MoS2 ink on an Indium-Tin-Oxide (ITO) glass substrate and then deposited graphene ink as a top electrode to fabricate an ITO/MoS2/graphene device. The fabricated device showed good rectification behavior and high ON/OFF switching behavior with a max photocurrent of 15 µA at +2 V. The technique thus paves the way for low-cost, low-temperature processing of electronics and one-step fabrication.",

author = "Amal AlAmri and Ng, {Tien Khee} and Boukortt, {Nour El I} and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2023-05-02 Acknowledgements: This research work was funded by the Institutional Fund Project under grant no. (IFPHI 784-665-1442). Therefore, the authors gratefully acknowledge financial support from the Ministry of Education, King Abdulaziz University, DSR, Jeddah, Saudi Arabia. The authors gratefully acknowledge technical support from the Ministry of Education, King Abdulaziz University, DSR, Jeddah, Saudi Arabia, in addition to King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia. The authors would like to thank Alessandro Genovese for his help in performing the SEM/TEM images.",

year = "2023",

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doi = "10.3390/coatings13050831",

language = "English (US)",

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AU - AlAmri, Amal

AU - Ng, Tien Khee

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AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2023-05-02 Acknowledgements: This research work was funded by the Institutional Fund Project under grant no. (IFPHI 784-665-1442). Therefore, the authors gratefully acknowledge financial support from the Ministry of Education, King Abdulaziz University, DSR, Jeddah, Saudi Arabia. The authors gratefully acknowledge technical support from the Ministry of Education, King Abdulaziz University, DSR, Jeddah, Saudi Arabia, in addition to King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia. The authors would like to thank Alessandro Genovese for his help in performing the SEM/TEM images.

PY - 2023/4/26

Y1 - 2023/4/26

N2 - Lightweight and flexible electronics have recently emerged at the forefront of optoelectronic applications. In this regard, graphene electrodes enable opportunities for new photodiode devices. In this paper, we formulated and tested graphene ink using the standard inkjet printing technique. It was shown that the maximum conductivity of ink was achieved for 14 print passes of the graphene layer. Moreover, we deposited Molybdenum Disulfide (MoS2) ink in the same pattern and used it as an active layer. We put MoS2 ink on an Indium-Tin-Oxide (ITO) glass substrate and then deposited graphene ink as a top electrode to fabricate an ITO/MoS2/graphene device. The fabricated device showed good rectification behavior and high ON/OFF switching behavior with a max photocurrent of 15 µA at +2 V. The technique thus paves the way for low-cost, low-temperature processing of electronics and one-step fabrication.

AB - Lightweight and flexible electronics have recently emerged at the forefront of optoelectronic applications. In this regard, graphene electrodes enable opportunities for new photodiode devices. In this paper, we formulated and tested graphene ink using the standard inkjet printing technique. It was shown that the maximum conductivity of ink was achieved for 14 print passes of the graphene layer. Moreover, we deposited Molybdenum Disulfide (MoS2) ink in the same pattern and used it as an active layer. We put MoS2 ink on an Indium-Tin-Oxide (ITO) glass substrate and then deposited graphene ink as a top electrode to fabricate an ITO/MoS2/graphene device. The fabricated device showed good rectification behavior and high ON/OFF switching behavior with a max photocurrent of 15 µA at +2 V. The technique thus paves the way for low-cost, low-temperature processing of electronics and one-step fabrication.

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JF - Coatings

IS - 5

ER -

Printed Graphene Electrode for ITO/MoS2/Graphene Photodiode Application

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