Probing the electrical properties of highly-doped Al:ZnO nanowire ensembles

Rodrigo Noriega; Jonathan Rivnay; Ludwig Goris; Daniel Kälblein; Hagen Klauk; Klaus Kern; Linda M. Thompson; Aaron C. Palke; Jonathan F. Stebbins; Jacob R. Jokisaari; Greg Kusinski; Alberto Salleo

doi:10.1063/1.3360930

Probing the electrical properties of highly-doped Al:ZnO nanowire ensembles

Rodrigo Noriega, Jonathan Rivnay, Ludwig Goris, Daniel Kälblein, Hagen Klauk, Klaus Kern, Linda M. Thompson, Aaron C. Palke, Jonathan F. Stebbins, Jacob R. Jokisaari, Greg Kusinski, Alberto Salleo

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

The analysis of transparent conducting oxide nanostructures suffers from a lack of high throughput yet quantitatively sensitive set of analytical techniques that can properly assess their electrical properties and serve both as characterization and diagnosis tools. This is addressed by applying a comprehensive set of characterization techniques to study the electrical properties of solution-grown Al-doped ZnO nanowires as a function of composition from 0 to 4 at. % Al:Zn. Carrier mobility and charge density extracted from sensitive optical absorption measurements are in agreement with those extracted from single-wire field-effect transistor devices. The mobility in undoped nanowires is 28 cm2 /V s and decreases to ∼14 cm2 /V s at the highest doping density, though the carrier density remains approximately constant (1020 cm-3) due to limited dopant activation or the creation of charge-compensating defects. Additionally, the local geometry of the Al dopant is studied by nuclear magnetic resonance, showing the occupation of a variety of dopant sites. © 2010 American Institute of Physics.

Original language	English (US)
Pages (from-to)	074312
Journal	Journal of Applied Physics
Volume	107
Issue number	7
DOIs	https://doi.org/10.1063/1.3360930
State	Published - Apr 16 2010
Externally published	Yes

Access to Document

10.1063/1.3360930

Cite this

@article{f0af95c0679045d884f233acc4b2587e,

title = "Probing the electrical properties of highly-doped Al:ZnO nanowire ensembles",

abstract = "The analysis of transparent conducting oxide nanostructures suffers from a lack of high throughput yet quantitatively sensitive set of analytical techniques that can properly assess their electrical properties and serve both as characterization and diagnosis tools. This is addressed by applying a comprehensive set of characterization techniques to study the electrical properties of solution-grown Al-doped ZnO nanowires as a function of composition from 0 to 4 at. % Al:Zn. Carrier mobility and charge density extracted from sensitive optical absorption measurements are in agreement with those extracted from single-wire field-effect transistor devices. The mobility in undoped nanowires is 28 cm2 /V s and decreases to ∼14 cm2 /V s at the highest doping density, though the carrier density remains approximately constant (1020 cm-3) due to limited dopant activation or the creation of charge-compensating defects. Additionally, the local geometry of the Al dopant is studied by nuclear magnetic resonance, showing the occupation of a variety of dopant sites. {\textcopyright} 2010 American Institute of Physics.",

author = "Rodrigo Noriega and Jonathan Rivnay and Ludwig Goris and Daniel K{\"a}lblein and Hagen Klauk and Klaus Kern and Thompson, {Linda M.} and Palke, {Aaron C.} and Stebbins, {Jonathan F.} and Jokisaari, {Jacob R.} and Greg Kusinski and Alberto Salleo",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This research was supported by the King Abdullah University of Science and Technology (KAUST) : Global Research Partnership (GRP) through the Center for Advanced Molecular Photovoltaics (CAMP), the Global Climate and Energy Project (GCEP) through Stanford University and the Department of Energy (Solar America Initiative). We thank Ted Trigg for his collaboration and Craig H. Peters for helpful discussions in preparing this manuscript. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2010",

month = apr,

day = "16",

doi = "10.1063/1.3360930",

language = "English (US)",

volume = "107",

pages = "074312",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Probing the electrical properties of highly-doped Al:ZnO nanowire ensembles

AU - Noriega, Rodrigo

AU - Rivnay, Jonathan

AU - Goris, Ludwig

AU - Kälblein, Daniel

AU - Klauk, Hagen

AU - Kern, Klaus

AU - Thompson, Linda M.

AU - Palke, Aaron C.

AU - Stebbins, Jonathan F.

AU - Jokisaari, Jacob R.

AU - Kusinski, Greg

AU - Salleo, Alberto

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This research was supported by the King Abdullah University of Science and Technology (KAUST) : Global Research Partnership (GRP) through the Center for Advanced Molecular Photovoltaics (CAMP), the Global Climate and Energy Project (GCEP) through Stanford University and the Department of Energy (Solar America Initiative). We thank Ted Trigg for his collaboration and Craig H. Peters for helpful discussions in preparing this manuscript. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2010/4/16

Y1 - 2010/4/16

N2 - The analysis of transparent conducting oxide nanostructures suffers from a lack of high throughput yet quantitatively sensitive set of analytical techniques that can properly assess their electrical properties and serve both as characterization and diagnosis tools. This is addressed by applying a comprehensive set of characterization techniques to study the electrical properties of solution-grown Al-doped ZnO nanowires as a function of composition from 0 to 4 at. % Al:Zn. Carrier mobility and charge density extracted from sensitive optical absorption measurements are in agreement with those extracted from single-wire field-effect transistor devices. The mobility in undoped nanowires is 28 cm2 /V s and decreases to ∼14 cm2 /V s at the highest doping density, though the carrier density remains approximately constant (1020 cm-3) due to limited dopant activation or the creation of charge-compensating defects. Additionally, the local geometry of the Al dopant is studied by nuclear magnetic resonance, showing the occupation of a variety of dopant sites. © 2010 American Institute of Physics.

AB - The analysis of transparent conducting oxide nanostructures suffers from a lack of high throughput yet quantitatively sensitive set of analytical techniques that can properly assess their electrical properties and serve both as characterization and diagnosis tools. This is addressed by applying a comprehensive set of characterization techniques to study the electrical properties of solution-grown Al-doped ZnO nanowires as a function of composition from 0 to 4 at. % Al:Zn. Carrier mobility and charge density extracted from sensitive optical absorption measurements are in agreement with those extracted from single-wire field-effect transistor devices. The mobility in undoped nanowires is 28 cm2 /V s and decreases to ∼14 cm2 /V s at the highest doping density, though the carrier density remains approximately constant (1020 cm-3) due to limited dopant activation or the creation of charge-compensating defects. Additionally, the local geometry of the Al dopant is studied by nuclear magnetic resonance, showing the occupation of a variety of dopant sites. © 2010 American Institute of Physics.

UR - http://hdl.handle.net/10754/599407

UR - http://aip.scitation.org/doi/10.1063/1.3360930

UR - http://www.scopus.com/inward/record.url?scp=77951552970&partnerID=8YFLogxK

U2 - 10.1063/1.3360930

DO - 10.1063/1.3360930

M3 - Article

SN - 0021-8979

VL - 107

SP - 074312

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

Probing the electrical properties of highly-doped Al:ZnO nanowire ensembles

Abstract

Access to Document

Other files and links

Fingerprint

Cite this