Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems

R. J. Nicholas; P. A. Shields; R. A. Child; L. J. Li; E. Alphandéry; N. J. Mason; C. Bumby

doi:10.1016/j.physe.2003.08.004

Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems

R. J. Nicholas^*, P. A. Shields, R. A. Child, L. J. Li, E. Alphandéry, N. J. Mason, C. Bumby

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

14 Scopus citations

Abstract

The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at ∼ 2.3 μm.

Original language	English (US)
Pages (from-to)	204-210
Number of pages	7
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	20
Issue number	3-4
DOIs	https://doi.org/10.1016/j.physe.2003.08.004
State	Published - Jan 2004
Externally published	Yes
Event	Proceedings of the 11th International Conference on Narrow Gap - Buffalo, NY., United States Duration: Jun 16 2003 → Jun 20 2003

Keywords

GaSb
InAs
InSb
MOVPE
Quantum dots
Quantum well

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Access to Document

10.1016/j.physe.2003.08.004

Cite this

@article{edde489b9a2645418bc3f6a7a837346c,

title = "Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems",

abstract = "The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at ∼ 2.3 μm.",

keywords = "GaSb, InAs, InSb, MOVPE, Quantum dots, Quantum well",

author = "Nicholas, {R. J.} and Shields, {P. A.} and Child, {R. A.} and Li, {L. J.} and E. Alphand{\'e}ry and Mason, {N. J.} and C. Bumby",

year = "2004",

month = jan,

doi = "10.1016/j.physe.2003.08.004",

language = "English (US)",

volume = "20",

pages = "204--210",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "3-4",

note = "Proceedings of the 11th International Conference on Narrow Gap ; Conference date: 16-06-2003 Through 20-06-2003",

}

TY - JOUR

T1 - Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems

AU - Nicholas, R. J.

AU - Shields, P. A.

AU - Child, R. A.

AU - Li, L. J.

AU - Alphandéry, E.

AU - Mason, N. J.

AU - Bumby, C.

PY - 2004/1

Y1 - 2004/1

N2 - The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at ∼ 2.3 μm.

AB - The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at ∼ 2.3 μm.

KW - GaSb

KW - InAs

KW - InSb

KW - MOVPE

KW - Quantum dots

KW - Quantum well

UR - http://www.scopus.com/inward/record.url?scp=0347129561&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2003.08.004

DO - 10.1016/j.physe.2003.08.004

M3 - Conference article

AN - SCOPUS:0347129561

SN - 1386-9477

VL - 20

SP - 204

EP - 210

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 3-4

T2 - Proceedings of the 11th International Conference on Narrow Gap

Y2 - 16 June 2003 through 20 June 2003

ER -

Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this