Abstract
The photoelectrochemical (PEC) reduction of nitrogen (N2) to ammonia (NH3) has emerged as a potential alternative to the conventional Haber-Bosch approach as the solar energy-driven process reduces energy consumption. In this work, PEC N2 reduction is demonstrated with indium gallium nitride (InGaN) nanowires deposited with molybdenum carbide (Mo2C) co-catalyst. Interestingly, the incorporation of a GaN buffer layer between InGaN and Mo2C forms a suitable band alignment for rapid photogenerated charge carrier separation for the N2 reduction reaction (NRR). Impressively, a maximum NH3 production yield and Faradaic efficiency of 7.93 μg·h-1·cm-2 and 15.39%, respectively, is achieved at −0.2 V vs the reversible hydrogen electrode with the unique band structure of the Mo2C/GaN/InGaN photoelectrode. Density functional theory calculations reveal the favorable Gibbs free energy and efficient charge transfer process of the unique band structure of Mo2C/GaN/InGaN for effective NRR.
Original language | English (US) |
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Pages (from-to) | 10784-10793 |
Number of pages | 10 |
Journal | ACS Applied Energy Materials |
Volume | 6 |
Issue number | 21 |
DOIs | |
State | Published - Nov 13 2023 |
Keywords
- ammonia
- III−V nitrate
- molecular beam epitaxy
- molybdenum carbide
- nitrate reduction
ASJC Scopus subject areas
- Chemical Engineering (miscellaneous)
- Energy Engineering and Power Technology
- Electrochemistry
- Materials Chemistry
- Electrical and Electronic Engineering