Pseudo-source gated beta-gallium oxide MOSFET

Ganesh Mainali; Dhanu Chettri; Vishal Khandelwal; Mritunjay Kumar; Glen Isaac Maciel García; Zhiyuan Liu; Na Xiao; Jose Manuel Taboada Vasquez; Xiao Tang; Xiaohang Li

doi:10.1063/5.0231763

Pseudo-source gated beta-gallium oxide MOSFET

Ganesh Mainali, Dhanu Chettri, Vishal Khandelwal, Mritunjay Kumar, Glen Isaac Maciel García, Zhiyuan Liu, Na Xiao, Jose Manuel Taboada Vasquez, Xiao Tang, Xiaohang Li^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

This study demonstrates pseudo-source-gated beta-gallium oxide (β-Ga₂O₃) metal oxide semiconductor field effect transistors (MOSFETs). The proposed pseudo-source gated transistor (pseudo-SGT) architecture has a thin (∼11 nm) recessed channel design, effectively emulating conventional SGT characteristics without significantly compromising on-current. The fabricated devices exhibit remarkable intrinsic gain of 10⁴, low output conductance of 10⁻⁸ S/mm, transconductance of 10⁻³ S/mm, and drain saturation voltage of ∼1.5 V, while maintaining a drain current of 1.3 mA/mm. These enhanced performance metrics significantly expand the potential of β-Ga₂O₃ MOSFETs for the development of Ga₂O₃ monolithic power integrated circuits.

Original language	English (US)
Article number	142104
Journal	Applied Physics Letters
Volume	125
Issue number	14
DOIs	https://doi.org/10.1063/5.0231763
State	Published - Sep 30 2024

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Pseudo-source gated beta-gallium oxide MOSFET",

abstract = "This study demonstrates pseudo-source-gated beta-gallium oxide (β-Ga2O3) metal oxide semiconductor field effect transistors (MOSFETs). The proposed pseudo-source gated transistor (pseudo-SGT) architecture has a thin (∼11 nm) recessed channel design, effectively emulating conventional SGT characteristics without significantly compromising on-current. The fabricated devices exhibit remarkable intrinsic gain of 104, low output conductance of 10−8 S/mm, transconductance of 10−3 S/mm, and drain saturation voltage of ∼1.5 V, while maintaining a drain current of 1.3 mA/mm. These enhanced performance metrics significantly expand the potential of β-Ga2O3 MOSFETs for the development of Ga2O3 monolithic power integrated circuits.",

author = "Ganesh Mainali and Dhanu Chettri and Vishal Khandelwal and Mritunjay Kumar and Garc{\'i}a, \{Glen Isaac Maciel\} and Zhiyuan Liu and Na Xiao and Vasquez, \{Jose Manuel Taboada\} and Xiao Tang and Xiaohang Li",

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doi = "10.1063/5.0231763",

language = "English (US)",

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T1 - Pseudo-source gated beta-gallium oxide MOSFET

AU - Mainali, Ganesh

AU - Chettri, Dhanu

AU - Khandelwal, Vishal

AU - Kumar, Mritunjay

AU - García, Glen Isaac Maciel

AU - Liu, Zhiyuan

AU - Xiao, Na

AU - Vasquez, Jose Manuel Taboada

AU - Tang, Xiao

AU - Li, Xiaohang

PY - 2024/9/30

Y1 - 2024/9/30

N2 - This study demonstrates pseudo-source-gated beta-gallium oxide (β-Ga2O3) metal oxide semiconductor field effect transistors (MOSFETs). The proposed pseudo-source gated transistor (pseudo-SGT) architecture has a thin (∼11 nm) recessed channel design, effectively emulating conventional SGT characteristics without significantly compromising on-current. The fabricated devices exhibit remarkable intrinsic gain of 104, low output conductance of 10−8 S/mm, transconductance of 10−3 S/mm, and drain saturation voltage of ∼1.5 V, while maintaining a drain current of 1.3 mA/mm. These enhanced performance metrics significantly expand the potential of β-Ga2O3 MOSFETs for the development of Ga2O3 monolithic power integrated circuits.

AB - This study demonstrates pseudo-source-gated beta-gallium oxide (β-Ga2O3) metal oxide semiconductor field effect transistors (MOSFETs). The proposed pseudo-source gated transistor (pseudo-SGT) architecture has a thin (∼11 nm) recessed channel design, effectively emulating conventional SGT characteristics without significantly compromising on-current. The fabricated devices exhibit remarkable intrinsic gain of 104, low output conductance of 10−8 S/mm, transconductance of 10−3 S/mm, and drain saturation voltage of ∼1.5 V, while maintaining a drain current of 1.3 mA/mm. These enhanced performance metrics significantly expand the potential of β-Ga2O3 MOSFETs for the development of Ga2O3 monolithic power integrated circuits.

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U2 - 10.1063/5.0231763

DO - 10.1063/5.0231763

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VL - 125

JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 142104

ER -

Pseudo-source gated beta-gallium oxide MOSFET

Abstract

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