Abstract
In-and Yb-doped CoSb3 thin films were prepared by pulsed laser deposition. Process optimization studies revealed that a very narrow process window exists for the growth of single-phase skutterudite films. The electrical conductivity and Seebeck coefficient measured in the temperature range 300-700 K revealed an irreversible change on the first heating cycle in argon ambient, which is attributed to the enhanced surface roughness of the films or trace secondary phases. A power factor of 0.68 W m-1 K-1 was obtained at ∼700 K, which is nearly six times lower than that of bulk samples. This difference is attributed to grain boundary scattering that causes a drop in film conductivity. Copyright © Materials Research Society 2011.
Original language | English (US) |
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Pages (from-to) | 1836-1841 |
Number of pages | 6 |
Journal | Journal of Materials Research |
Volume | 26 |
Issue number | 15 |
DOIs | |
State | Published - Jul 29 2011 |
ASJC Scopus subject areas
- Mechanics of Materials
- General Materials Science
- Mechanical Engineering
- Condensed Matter Physics