Abstract
A significant modification of the bandgap energy of GaInAs/GaInAsP laser structure was performed using pulsed-laser-induced disordering (PLID) technique. A Q-switched Nd:YAG laser with wavelength of 1.064 μm generated pulses of 8 ns and pulse repetition rate of 10 Hz was used. The effect of laser processing on the material structure was investigated using photoluminescence measurements and transmission electron microscopy.
| Original language | English (US) |
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| Pages | 235 |
| Number of pages | 1 |
| State | Published - 2000 |
| Externally published | Yes |
| Event | 2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France Duration: Sep 10 2000 → Sep 15 2000 |
Other
| Other | 2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) |
|---|---|
| City | Nice, France |
| Period | 09/10/00 → 09/15/00 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering