Quadruple reduction of threshold current density for microring quantum dot lasers epitaxially grown on (001) Si

Yating Wan; Daehwan Jung; Justin Norman; Kaiyin Feng; Alp Dagli; Arthur C. Gossard; John E. Bowers

doi:10.1364/CLEO_SI.2018.SW3Q.3

Quadruple reduction of threshold current density for microring quantum dot lasers epitaxially grown on (001) Si

Yating Wan, Daehwan Jung, Justin Norman, Kaiyin Feng, Alp Dagli, Arthur C. Gossard, John E. Bowers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

A quadruple reduction of threshold current density was achieved for electrically pumped quantum-dot micro-rings epitaxially grown on (001) silicon. This was enabled by a low threading dislocation density GaAs buffer layer and a smoothed etching sidewall.

Original language	English (US)
Title of host publication	Optics InfoBase Conference Papers
Publisher	Optica Publishing Group (formerly OSA)
ISBN (Print)	9781943580422
DOIs	https://doi.org/10.1364/CLEO_SI.2018.SW3Q.3
State	Published - Jan 1 2018
Externally published	Yes

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10.1364/CLEO_SI.2018.SW3Q.3

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@inproceedings{f9dd598c386e419aa45d3353ec097cd5,

title = "Quadruple reduction of threshold current density for microring quantum dot lasers epitaxially grown on (001) Si",

abstract = "A quadruple reduction of threshold current density was achieved for electrically pumped quantum-dot micro-rings epitaxially grown on (001) silicon. This was enabled by a low threading dislocation density GaAs buffer layer and a smoothed etching sidewall.",

author = "Yating Wan and Daehwan Jung and Justin Norman and Kaiyin Feng and Alp Dagli and Gossard, {Arthur C.} and Bowers, {John E.}",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-18",

year = "2018",

month = jan,

day = "1",

doi = "10.1364/CLEO_SI.2018.SW3Q.3",

language = "English (US)",

isbn = "9781943580422",

booktitle = "Optics InfoBase Conference Papers",

publisher = "Optica Publishing Group (formerly OSA)",

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TY - GEN

T1 - Quadruple reduction of threshold current density for microring quantum dot lasers epitaxially grown on (001) Si

AU - Wan, Yating

AU - Jung, Daehwan

AU - Norman, Justin

AU - Feng, Kaiyin

AU - Dagli, Alp

AU - Gossard, Arthur C.

AU - Bowers, John E.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2018/1/1

Y1 - 2018/1/1

N2 - A quadruple reduction of threshold current density was achieved for electrically pumped quantum-dot micro-rings epitaxially grown on (001) silicon. This was enabled by a low threading dislocation density GaAs buffer layer and a smoothed etching sidewall.

AB - A quadruple reduction of threshold current density was achieved for electrically pumped quantum-dot micro-rings epitaxially grown on (001) silicon. This was enabled by a low threading dislocation density GaAs buffer layer and a smoothed etching sidewall.

UR - https://opg.optica.org/abstract.cfm?URI=CLEO_SI-2018-SW3Q.3

UR - http://www.scopus.com/inward/record.url?scp=85048957234&partnerID=8YFLogxK

U2 - 10.1364/CLEO_SI.2018.SW3Q.3

DO - 10.1364/CLEO_SI.2018.SW3Q.3

M3 - Conference contribution

SN - 9781943580422

BT - Optics InfoBase Conference Papers

PB - Optica Publishing Group (formerly OSA)

ER -

Quadruple reduction of threshold current density for microring quantum dot lasers epitaxially grown on (001) Si

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